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BB835

Description
Variable Capacitance Diode, S Band, 9.1pF C(T), Silicon
CategoryDiscrete semiconductor    diode   
File Size72KB,3 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BB835 Overview

Variable Capacitance Diode, S Band, 9.1pF C(T), Silicon

BB835 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Diode Capacitance Tolerance8.11%
Minimum diode capacitance ratio13.5
Nominal diode capacitance9.1 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandS BAND
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

BB835 Preview

BB 835
Silicon Tuning Diode
Extended frequency range up to 2.8 GHz
special design for use in TV-sat indoor units
High capacitance ratio
2
1
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Storage temperature
Peak reverse voltage (R
5k )
Symbol
V
R
V
RM
I
F
T
op
T
stg
Value
30
35
20
-55 ... 150
-55 ... 150
mA
°C
Unit
V
Operating temperature range




VPS05176
Type
BB 835
Marking
yellow X
Pin Configuration
1=C
2=A
Package
SOD-323
1
Sep-18-2000
BB 835
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC characteristics
Reverse current
V
R
= 30 V
Reverse current
V
R
= 30 V,
T
A
= 85 °C
AC characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 28 V,
f
= 1 MHz
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz
Series resistance
V
R
= 1 V,
f
= 470 MHz
Series inductance
L
s
-
1.8
-
1) In-line matching. For details please refer to Application Note 047
Unit
max.
10
200
nA
typ.
-
-
I
R
I
R
-
-
C
T
8.5
0.5
C
T1
/C
T28
C
T
/C
T
13.5
-
-
9.1
0.62
14.7
-
2.4
10
0.75
-
3
-
pF
-
%
2
Sep-18-2000

nH

Capacitance matching
r
s
BB 835
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1MHz
BB 835
EHD07170
Temperature coefficient of the diode
capacitance
T
Cc
=
f
(V
R
)
10
-3
10
C
D
pF
8
1/°C
6
5
4
3
2
1
0
10
0
10
1
T
Cc
10
-4
10
-5 0
10
7
V
V
R
10
2
10
1
V
10
2
V
R
3
Sep-18-2000
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