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Datasheet> All Categories > LED optoelectronic/LED> photoelectric> BPW34B
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BPW34B

Description
PIN Photodiode
CategoryLED optoelectronic/LED    photoelectric   
File Size77KB，5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BPW34B Overview

PIN Photodiode

BPW34B Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codeunknown
Maximum dark power2 nA
Installation featuresTHROUGH HOLE MOUNT
Maximum operating temperature80 °C
Minimum operating temperature-40 °C
Optoelectronic device typesPIN PHOTODIODE
Maximum response time3.5e-7 s
Maximum reverse voltage32 V
Semiconductor materialSilicon
surface mountNO

BPW34B Preview

Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit
Silicon PIN Photodiode with Enhanced Blue Sensitivity
BPW 34 B
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 350 nm bis 1100 nm
• Kurze Schaltzeit (typ. 25 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
• SMT-Variante auf Anfrage
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb im sichtbaren Lichtbereich
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPW 34 B
Bestellnummer
Ordering Code
Q62702-P945
Features
• Especially suitable for applications from
350 nm to 1100 nm
• Short switching time (typ. 25 ns)
• DIL plastic package with high packing density
• SMT version on request
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2001-02-21
1
BPW 34 B
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Löttemperatur (Lötstelle 2 mm vom
Gehäuse entfernt bei Lötzeit
t
≤
3 s)
Soldering temperature in 2 mm distance
from case bottom (
t
≤
3 s)
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°C
Total power dissipation
Symbol
Symbol
Wert
Value
– 40 … + 85
230
Einheit
Unit
°C
°C
T
op
;
T
stg
T
S
V
R
P
tot
32
150
V
mW
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K)
Bezeichnung
Parameter
Fotoempfindlichkeit,
V
R
= 5 V
Spectral sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Symbol
Symbol
Wert
Value
75
850
350 … 1100
Einheit
Unit
nA/Ix
nm
nm
S
λ
S max
λ
A
7.45
2.73
×
2.73
0.5
±
60
2 (≤ 30)
0.2
mm
2
mm
×
mm
mm
Grad
deg.
nA
A/W
Abmessung der bestrahlungsempfindlichen Fläche
L
×
B
Dimensions of radiant sensitive area
L
×
W
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 10 V
Dark current
Spektrale Fotoempfindlichkeit,
λ
= 400 nm
Spectral sensitivity
2001-02-21
2
H
ϕ
I
R
S
λ
BPW 34 B
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K) (cont’d)
Bezeichnung
Parameter
Quantenausbeute,
λ
= 400 nm
Quantum yield
Leerlaufspannung,
E
v
= 1000 Ix
Open-circuit voltage
Kurzschlußstrom
Short-circuit current
E
e
= 0.5 mW/cm
2
,
λ
= 400 nm
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
Ω;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 800
µA
Durchlaßspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V,
λ
= 400 nm
Nachweisgrenze,
V
R
= 10 V,
λ
= 400 nm
Detection limit
Symbol
Symbol
η
Wert
Value
0.62
390
7.4 (≥ 5.4)
Einheit
Unit
Electrons
Photon
mV
µA
V
O
I
SC
t
r,
t
f
25
ns
V
F
C
0
TC
V
TC
I
NEP
1.3
72
– 2.6
0.18
1.3
×
10
– 13
V
pF
mV/K
%/K
W
-----------
-
Hz
cm
×
Hz
-------------------------
-
W
D*
2.1
×
10
12
2001-02-21
3
BPW 34 B
Relative Spectral Sensitivity
S
rel
=
f
(λ)
100
S
rel
%
80
OHF01001
Photocurrent
I
P
=
f
(
E
v
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
v
)
Ι
P
10
3
µ
A
OHF01066
Total Power Dissipation
P
tot
=
f
(
T
A
)
160
mW
P
tot
140
120
100
OHF00958
10
4
mV
V
O
10
3
10
2
V
O
60
10
1
Ι
P
10
2
80
60
40
10
0
10
1
40
20
20
0
400
600
800
1000 nm 1200
λ
10
-1
10
0
10
0
10
1
10
2
10
3
lx 10
4
E
V
0
0
20
40
60
80 ˚C 100
T
A
Dark Current
I
R
=
f
(
V
R
),
E
= 0
4000
OHF00080
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
100
C
pF
80
OHF00081
Dark Current
I
R
=
f
(
T
A
),
V
R
= 5 V,
E
= 0
10
3
OHF00082
Ι
R
pA
Ι
R
nA
10
2
3000
70
60
2000
50
40
30
10
1
1000
10
0
20
10
0
0
5
10
15
V
V
R
20
0
-2
10
10
-1
10
0
10
1
V 10
2
V
R
10
-1
0
20
40
60
80 ˚C 100
T
A
Directional Characteristics
S
rel
=
f
(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-02-21
4
BPW 34 B
Maßzeichnung
Package Outlines
5.4 (0.213)
Cathode marking
4.0 (0.157)
3.7 (0.146)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
4.9 (0.193)
4.5 (0.177)
0.8 (0.031)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
2.2 (0.087)
1.9 (0.075)
4.3 (0.169)
Chip position
0.6 (0.024)
1.8 (0.071)
1.4 (0.055)
0.6 (0.024)
0.4 (0.016)
0.4 (0.016)
0.35 (0.014)
0.5 (0.020)
0.2 (0.008)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
0 ... 5˚
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
5.08 (0.200)
spacing
GEOY6643
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical
components
1
, may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-02-21
5
3.5 (0.138)
3.0 (0.118)
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