BSV15-6 datasheet, PDF - EEWORLD Datasheet

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BSV15-6: DescriptionTrans GP BJT PNP 40V 1A 3-Pin TO-39; CategoryDiscrete semiconductor The transistor; File Size167KB，2 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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BSV15-6 Overview

Trans GP BJT PNP 40V 1A 3-Pin TO-39

BSV15-6 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
Reach Compliance Code	unknown

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BSV15-6 Related Products

	BSV15-6	BSV16-10	BSV15XE1	BSV15-10	BSV16-16	BSV17-10
Description	Trans GP BJT PNP 40V 1A 3-Pin TO-39	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Trans GP BJT PNP 40V 1A 3-Pin TO-39 Box	Trans GP BJT PNP 40V 1A 3-Pin TO-39 Box	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
Maker	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
package instruction	-	CYLINDRICAL, O-MBCY-W3	-	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Shell connection	-	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	-	1 A	-	1 A	1 A	1 A
Collector-emitter maximum voltage	-	60 V	-	40 V	60 V	80 V
Configuration	-	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	25	-	25	35	25
JEDEC-95 code	-	TO-39	-	TO-39	TO-39	TO-39
JESD-30 code	-	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	-	1	-	1	1	1
Number of terminals	-	3	-	3	3	3
Maximum operating temperature	-	200 °C	-	200 °C	200 °C	200 °C
Minimum operating temperature	-	-65 °C	-	-65 °C	-65 °C	-65 °C
Package body material	-	METAL	-	METAL	METAL	METAL
Package shape	-	ROUND	-	ROUND	ROUND	ROUND
Package form	-	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	-	PNP	-	PNP	PNP	PNP
surface mount	-	NO	-	NO	NO	NO
Terminal form	-	WIRE	-	WIRE	WIRE	WIRE
Terminal location	-	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	-	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	-	50 MHz	-	50 MHz	50 MHz	50 MHz
Maximum off time (toff)	-	500 ns	-	500 ns	500 ns	500 ns
Maximum opening time (tons)	-	650 ns	-	650 ns	650 ns	650 ns

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