BSV17-10 datasheet, PDF - EEWORLD Datasheet

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BSV17-10: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39; CategoryDiscrete semiconductor The transistor; File Size167KB，2 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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BSV17-10 Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39

BSV17-10 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Maximum off time (toff)	500 ns
Maximum opening time (tons)	650 ns

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BSV17-10 Related Products

	BSV17-10	BSV16-10	BSV15XE1	BSV15-10	BSV16-16	BSV15-6
Description	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Trans GP BJT PNP 40V 1A 3-Pin TO-39 Box	Trans GP BJT PNP 40V 1A 3-Pin TO-39 Box	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Trans GP BJT PNP 40V 1A 3-Pin TO-39
Maker	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	-	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	-
Shell connection	COLLECTOR	COLLECTOR	-	COLLECTOR	COLLECTOR	-
Maximum collector current (IC)	1 A	1 A	-	1 A	1 A	-
Collector-emitter maximum voltage	80 V	60 V	-	40 V	60 V	-
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	25	25	-	25	35	-
JEDEC-95 code	TO-39	TO-39	-	TO-39	TO-39	-
JESD-30 code	O-MBCY-W3	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3	-
Number of components	1	1	-	1	1	-
Number of terminals	3	3	-	3	3	-
Maximum operating temperature	200 °C	200 °C	-	200 °C	200 °C	-
Minimum operating temperature	-65 °C	-65 °C	-	-65 °C	-65 °C	-
Package body material	METAL	METAL	-	METAL	METAL	-
Package shape	ROUND	ROUND	-	ROUND	ROUND	-
Package form	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	-
Polarity/channel type	PNP	PNP	-	PNP	PNP	-
surface mount	NO	NO	-	NO	NO	-
Terminal form	WIRE	WIRE	-	WIRE	WIRE	-
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	-
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON	-
Nominal transition frequency (fT)	50 MHz	50 MHz	-	50 MHz	50 MHz	-
Maximum off time (toff)	500 ns	500 ns	-	500 ns	500 ns	-
Maximum opening time (tons)	650 ns	650 ns	-	650 ns	650 ns	-

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