JAN2N1490 datasheet, PDF - EEWORLD Datasheet

JAN2N1490: DescriptionPower Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size51KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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JAN2N1490 Overview

Power Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	55 V
Configuration	SINGLE
Minimum DC current gain (hFE)	27
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	75 W
Maximum power dissipation(Abs)	75 W
Certification status	Not Qualified
Guideline	MIL
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	1 MHz
VCEsat-Max	1 V
Base Number Matches	1

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