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BLW898

Description
RF Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size38KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

BLW898 Overview

RF Power Bipolar Transistor

BLW898 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instruction,
Reach Compliance Codeunknown

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BLW898
NPN POWER TRANSISTOR
DESCRIPTION:
The
ASI BLW898
is Designed for
use in UHF applications up to 860
MHz.
FEATURES:
P
G
= 9.0 dB Min at 860 MHz
Common Emitter
Omnigold™
Metallization System
MAXIMUM RATINGS
I
C
V
CEO
P
DISS
T
J
T
STG
θ
JC
3.7 A
28 V
44 W @ T
MB
= 70 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.0 °C/W
PACKAGE STYLE .360 6L FLG
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
h
FE
I
CBO
I
CEO
C
C
I
C
= 30 mA
I
C
= 15 mA
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
28
60
2.5
UNITS
V
V
V
I
E
= 0.6 mA
V
CE
= 25 V
V
CB
= 28 V
V
CE
= 20 mA
V
CB
= 25 V
V
CE
= 25 V
P
OUT
= 3.0 W
I
CQ
= 1.1 A
f = 1.0 MHz
f = 860 MHz
I
C
= 1.1 A
30
140
1.5
3.0
18
---
mA
mA
pF
dB
9.0
P
G
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV 0
1/1

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