BLL8H1214L-250;
BLL8H1214LS-250
LDMOS L-band radar power transistor
Rev. 2 — 13 January 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
(GHz)
1.2 to 1.4
V
DS
(V)
50
P
L
(W)
250
G
p
(dB)
17
D
(%)
55
t
r
(ns)
15
t
f
(ns)
5
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
NXP Semiconductors
BLL8H1214L(S)-250
LDMOS L-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLL8H1214L-250 (SOT502A)
BLL8H1214LS-250 (SOT502B)
1
2
3
drain
gate
source
[1]
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLL8H1214L-250
BLL8H1214LS-250
-
-
Description
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
100
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLL8H1214L-250_1214LS-250
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 13 January 2015
2 of 13
NXP Semiconductors
BLL8H1214L(S)-250
LDMOS L-band radar power transistor
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-c)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
T
case
= 85
C;
P
L
= 250 W
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
t
p
= 500
s;
= 20 %
0.10
0.13
0.15
0.14
0.20
K/W
K/W
K/W
K/W
K/W
Typ
Unit
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 270 mA
Min
100
1.3
-
32
-
1.6
-
Typ
-
1.8
-
42
-
2.3
100
Max Unit
-
1.4
-
140
-
169
V
A
A
nA
S
m
2.25 V
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.5 A
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 50 V; I
Dq
= 100 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
V
DS
G
p
RL
in
P
L(1dB)
D
P
droop(pulse)
t
r
t
f
Parameter
drain-source voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
P
L
= 250 W
P
L
= 250 W
P
L
= 250 W
P
L
= 250 W
Conditions
P
L
= 250 W
P
L
= 250 W
P
L
= 250 W
Min Typ Max Unit
-
15
-
-
49
-
-
-
-
17
10
300
55
0
15
5
50
-
-
-
-
0.3
-
-
V
dB
dB
W
%
dB
ns
ns
BLL8H1214L-250_1214LS-250
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 13 January 2015
3 of 13
NXP Semiconductors
BLL8H1214L(S)-250
LDMOS L-band radar power transistor
7. Application information
7.1 Ruggedness in class-AB operation
The BLL8H1214L-250 and BLL8H1214LS-250 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 50 V; I
Dq
= 100 mA; P
L
= 250 W; t
p
= 300
s;
= 10 %.
7.2 Impedance information
Table 8.
Typical impedance
Typical values unless otherwise specified.
f
(GHz)
1.2
1.3
1.4
Z
S
()
1.268
j2.623
2.193
j2.457
2.359
j2.052
Z
L
()
2.987
j1.664
2.162
j1.326
1.604
j1.887
Fig 1.
Definition of transistor impedance
BLL8H1214L-250_1214LS-250
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 13 January 2015
4 of 13
NXP Semiconductors
BLL8H1214L(S)-250
LDMOS L-band radar power transistor
7.3 Application circuit
See
Table 9
for list of components.
Fig 2.
Component layout for class-AB application circuit
Table 9.
List of components
See
Figure 2.
Striplines are on a Rogers Duroid 6006 Printed-Circuit Board (PCB);
r
= 6.15 F/m;
thickness = 0.64 mm
Component
C1
C2, C4
C3, C8
C5
C6, C7
C9
C10
R1
[1]
[2]
[3]
Description
Value
[1]
[2]
[2]
[3]
[3]
[3]
Remarks
multilayer ceramic chip capacitor 10
F,
35 V
multilayer ceramic chip capacitor 51 pF
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 82 pF
multilayer ceramic chip capacitor 56 pF
multilayer ceramic chip capacitor 100 pF
electrolytic capacitor
SMD resistor
47
F,
63 V
10
SMD 0603
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 800B or capacitor of same quality.
BLL8H1214L-250_1214LS-250
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 13 January 2015
5 of 13
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