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BB308BRLRA

Description
TRANSISTOR 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size318KB,34 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BB308BRLRA Overview

TRANSISTOR 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal

BB308BRLRA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionPLASTIC, TO-226AA, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)320 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC307
BC307B
BC307C
BC308C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC307, B, C
–45
–50
–5.0
–100
350
2.8
1.0
8.0
– 55 to +150
BC308C
–25
–30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0)
Collector–Emitter Leakage Current
(VCES = –50 V, VBE = 0)
(VCES = –30 V, VBE = 0)
(VCES = –50 V, VBE = 0) TA = 125°C
(VCES = –30 V, VBE = 0) TA = 125°C
BC307,B,C
BC308C
BC307,B,C
BC308C
BC307,B,C
BC308C
BC307,B,C
BC308C
V(BR)CEO
V(BR)EBO
ICES
–0.2
–0.2
–0.2
–0.2
–15
–15
–4.0
–4.0
nAdc
µA
–45
–25
–5.0
–5.0
Vdc
Vdc
REV 1
2–88
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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