*
S
. R
le #E
L
Fi
U.
e
el
ct
ed
G
39
CO
716
E
Pa
a
ck
ge
ZE
NI
s
D
E2
TO-92
TO-202
*TO-220
3-lead
Compak
TO-263
D
2
Pak
TO-252
D-Pak
TO-251
V-Pak
*TO-3
Fastpak
MT2
MT1
G
Triacs
(0.8 A to 35 A)
E2
General Description
These gated triacs from Teccor Electronics are part of a broad
line of bidirectional semiconductors. The devices range in current
ratings from 0.8 A to 35 A and in voltages from 200 V to 1000 V.
The triac may be gate triggered from a blocking to conduction
state for either polarity of applied voltage and is designed for AC
switching and phase control applications such as speed and tem-
perature modulation controls, lighting controls, and static switch-
ing relays. The triggering signal is normally applied between the
gate and MT1.
Isolated packages are offered with internal construction, having
the case or mounting tab electrically isolated from the semicon-
ductor chip. This feature facilitates the use of low-cost assembly
and convenient packaging techniques. Tape-and-reel capability
is available. See “Packing Options” section of this catalog.
All Teccor triacs have glass-passivated junctions to ensure long-
term device reliability and parameter stability. Teccor's glass-
passivated junctions offer a rugged, reliable barrier against junc-
tion contamination.
Variations of devices covered in this data sheet are available for
custom design applications. Consult factory for more information.
Features
•
•
•
•
Electrically-isolated packages
Glass-passivated junctions
Voltage capability — up to 1000 V
Surge capability — up to 200 A
Compak Package
•
•
•
•
Surface mount package — 0.8 A and 1 A series
New small profile three-leaded Compak package
Packaged in embossed carrier tape with 2,500
devices per reel
Can replace SOT-223
©2004 Littelfuse, Inc.
Thyristor Product Catalog
E2 - 1
http://www.littelfuse.com
+1 972-580-7777
Triacs
Data Sheets
Part Number
I
T(RMS)
(4)
MT2
Isolated
Non-isolated
MT2
V
DRM
(1)
I
GT
(3) (7) (15)
MT2
G
MT2
G
MT2
MT2
G
MT2
MT1
MT1
MT1
G
MT2
MT2
MT1
MT1
MT2
G
G
MT1
MT2
MT1
G
MT2
MT1
G
MT2
Volts
TO-92
MAX
TO-220
Compak
Q2X3
Q4X3
Q6X3
Q2X4
Q4X4
Q6X4
Q2N3
Q4N3
Q6N3
Q2N4
Q4N4
Q6N4
Q2004L3
Q4004L3
Q6004L3
Q2004L4
Q4004L4
Q6004L4
Q8004L4
QK004L4
Q2004F31
Q4004F31
Q6004F31
Q2004F41
Q4004F41
Q6004F41
Q2004D3
Q4004D3
Q6004D3
Q2004D4
Q4004D4
Q6004D4
Q8004D4
QK004D4
Q2006F41
Q4006F41
Q6006F51
Q2006R4
Q4006R4
Q6006R5
Q8006R5
QK006R5
Q2008F41
Q4008F41
Q6008F51
Q2008R4
Q4008R4
Q6008R5
Q8008R5
QK008R5
Q2004V3
Q4004V3
Q6004V3
Q2004V4
Q4004V4
Q6004V4
Q8004V4
QK004V4
Q2006N4
Q4006N4
Q6006N5
Q8006N5
QK006N5
Q2008N4
Q4008N4
Q6008N5
Q8008N5
QK008N5
TO-202
TO-220
TO-252
D-Pak
TO-251
V-Pak
TO-263
D
2
Pak
MIN
200
400
600
200
400
600
200
400
600
200
400
600
200
400
600
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
10
10
10
25
25
25
10
10
10
25
25
25
10
10
10
25
25
25
25
25
25
25
50
50
50
25
25
50
50
50
QI
QII
10
10
10
25
25
25
10
10
10
25
25
25
10
10
10
25
25
25
25
25
25
25
50
50
50
25
25
50
50
50
mAmps
QIII QIV
10
10
10
25
25
25
10
10
10
25
25
25
10
10
10
25
25
25
25
25
25
25
50
50
50
25
25
50
50
50
QIV
TYP
25
25
25
50
50
50
25
25
25
50
50
50
25
25
25
50
50
50
50
50
50
50
75
75
75
50
50
75
75
75
See “Package Dimensions” section for variations. (11)
Q2X8E3
Q4X8E3
Q6X8E3
Q2X8E4
Q4X8E4
Q6X8E4
MAX
0.8 A
1A
Q201E3
Q401E3
Q601E3
Q201E4
Q401E4
Q601E4
4A
6A
Q2006L4
Q4006L4
Q6006L5
Q8006L5
QK006L5
8A
Q2008L4
Q4008L4
Q6008L5
Q8008L5
QK008L5
See “General Notes” on page E2 - 4 and “Electrical Specification Notes” on page E2 - 5.
http://www.littelfuse.com
+1 972-580-7777
E2 - 2
©2004 Littelfuse, Inc.
Thyristor Product Catalog
Data Sheets
Triacs
I
DRM
(1) (16)
V
TM
(1) (5)
V
GT
(2) (6)
(15) (18)
(19)
I
H
(1) (8)
(12)
I
GTM
(14)
P
GM
(14)
P
G(AV)
I
TSM
(9) (13)
dv/dt(c)
(1) (4) (13)
dv/dt
(1)
t
gt
(10)
I
2
t
di/dt
mAmps
T
C
=
T
C
=
T
C
=
25 °C 100 °C 125 °C
MAX
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
3
0.5
0.5
0.5
0.5
3
0.5
0.5
0.5
0.5
3
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
2
Volts
T
C
=
25 °C
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
Volts
T
C
=
25 °C
MAX
2
2
2
2.5
2.5
2.5
2
2
2
2.5
2.5
2.5
2
2
2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
mAmps
MAX
15
15
15
25
25
25
15
15
15
25
25
25
20
20
20
30
30
30
30
30
50
50
50
50
50
50
50
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.6
1.6
1.6
1.6
1.6
1.8
1.8
1.8
1.8
1.8
10
10
10
10
10
10
10
10
10
10
10
10
15
15
15
15
15
15
15
15
18
18
18
18
18
20
20
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Amps
Watts
Watts
Amps
60/50 Hz
10/8.3
10/8.3
10/8.3
10/8.3
10/8.3
10/8.3
20/16.7
20/16.7
20/16.7
20/16.7
20/16.7
20/16.7
55/46
55/46
55/46
55/46
55/46
55/46
55/46
55/46
80/65
80/65
80/65
80/65
80/65
100/83
100/83
100/83
100/83
100/83
Volts/µSec
TYP
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
2
2
4
4
4
4
4
4
4
4
4
4
Volts/µSec
T
C
=
T
C
=
100 °C 125 °C
MIN
40
35
25
50
45
35
40
40
30
50
50
40
50
50
40
100
100
75
60
50
200
200
150
125
100
250
250
220
150
100
150
150
125
100
120
120
100
85
30
25
15
40
35
25
30
30
20
40
40
30
40
40
30
75
75
50
40
µSec
TYP
2.5
2.5
2.5
3
3
3
2.5
2.5
2.5
3
3
3
2.5
2.5
2.5
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
0.41
0.41
0.41
0.41
0.41
0.41
1.6
1.6
1.6
1.6
1.6
1.6
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
26.5
26.5
26.5
26.5
26.5
41
41
41
41
41
20
20
20
20
20
20
30
30
30
30
30
30
50
50
50
50
50
50
50
50
70
70
70
70
70
70
70
70
70
70
Amp
2
Sec Amps/µSec
See “General Notes” on page E2 - 4 and “Electrical Specification Notes” on page E2 - 5.
©2004 Littelfuse, Inc.
Thyristor Product Catalog
E2 - 3
http://www.littelfuse.com
+1 972-580-7777
Triacs
Data Sheets
Part Number
I
T(RMS)
(4) (16)
MT1
Isolated
MT2
MT2
Non-isolated
MT2
V
DRM
(1)
MT2
I
GT
(3) (7) (15)
I
DRM
(1) (16)
G
MT2
MT1
Gate
MT1
MT2
G
MT1
G
MT2
MT1
G
MT2
mAmps
TO-263
D
2
Pak
Q2010N4
Q4010N4
Q6010N4
Q8010N4
QK010N4
Q2010N5
Q4010N5
Q6010N5
Q8010N5
QK010N5
Q2015N5
Q4015N5
Q6015N5
Q8015N5
QK015N5
Q2025N5
Q4025N5
Q6025N5
Q8025N5
QK025N5
Volts
MIN
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
600
800
600
800
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
QI
QII
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
QIII
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
120
120
120
120
QIV
50
50
50
50
50
75
75
75
75
75
QIV
TYP
0.05
0.05
0.05
0.1
0.1
0.05
0.05
0.05
0.1
0.1
0.05
0.05
0.05
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
T
C
=
25 °C
mAmps
T
C
=
T
C
=
100 °C 125 °C
MAX
1
1
1
1
3
0.5
0.5
0.5
0.5
3
0.5
0.5
0.5
1
3
1
1
1
1
3
5
5
5
5
3
3
3
3
2
2
2
3
2
2
2
2
TO-3
Fastpak
MAX
TO-220
Q2010L4
Q4010L4
Q6010L4
Q8010L4
TO-202
TO-220
Q2010R4
Q4010R4
Q6010R4
Q8010R4
QK010R4
See “Package Dimensions” section for variations. (11)
MAX
10 A
QK010L4
Q2010L5
Q4010L5
Q6010L5
Q8010L5
QK010L5
Q2015L5
Q4015L5
Q6015L5
Q8015L5
QK015L5
Q2010F51
Q4010F51
Q6010F51
Q2010R5
Q4010R5
Q6010R5
Q8010R5
QK010R5
Q2015R5
Q4015R5
Q6015R5
Q8015R5
QK015R5
Q2025R5
Q4025R5
Q6025R5
15 A
25 A
Q6025P5
Q8025P5
Q8025R5
QK025R5
35 A
Q6035P5
Q8035P5
Specific Test Conditions
di/dt
— Maximum rate-of-change of on-state current; I
GT
= 200 mA with
≤0.1
µ
s rise time
dv/dt
— Critical rate-of-rise of off-state voltage at rated V
DRM
gate open
dv/dt(c)
— Critical rate-of-rise of commutation voltage at rated V
DRM
and I
T(RMS)
commutating di/dt = 0.54 rated I
T(RMS)
/ms; gate
unenergized
I
2
t
— RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I
DRM
— Peak off-state current, gate open; V
DRM
= maximum rated value
I
GT
— DC gate trigger current in specific operating quadrants;
V
D
= 12 V dc
I
GTM
— Peak gate trigger current
I
H
— Holding current (DC); gate open
I
T(RMS)
— RMS on-state current conduction angle of 360°
I
TSM
— Peak one-cycle surge
P
G(AV)
— Average gate power dissipation
P
GM
— Peak gate power dissipation;
I
GT
≤
I
GTM
t
gt
— Gate controlled turn-on time; I
GT
= 200 mA with 0.1
µ
s rise time
V
DRM
— Repetitive peak blocking voltage
V
GT
— DC gate trigger voltage; V
D
= 12 V dc; R
L
= 60
Ω
V
TM
— Peak on-state voltage at maximum rated RMS current
General Notes
•
•
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25
°C
unless specified otherwise.
Operating temperature range (T
J
) is -65
°C
to +125
°C
for TO-92,
-25 °C to +125 °C for Fastpak, and -40
°C
to +125
°C
for all other
devices.
Storage temperature range (T
S
) is -65
°C
to +150
°C
for TO-92,
-40
°C
to +150
°C
for TO-202, and -40
°C
to +125
°C
for all other
devices.
Lead solder temperature is a maximum of 230
°C
for 10 seconds,
maximum;
≥1/16"
(1.59 mm) from case.
The case temperature (T
C
) is measured as shown on the dimen-
sional outline drawings. See “Package Dimensions” section of this
catalog.
•
•
•
http://www.littelfuse.com
+1 972-580-7777
E2 - 4
©2004 Littelfuse, Inc.
Thyristor Product Catalog
Data Sheets
Triacs
V
TM
(1) (5)
V
GT
(2) (6) (15)
(18) (19)
I
H
(1) (8) (12)
I
GTM
(14)
P
GM
(14)
P
G(AV)
I
TSM
(9) (13)
dv/dt(c)
(1) (4) (13)
dv/dt
(1)
t
gt
(10) (17)
I
2
t
di/dt
Volts
T
C
= 25 °C
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.8
1.8
1.8
1.8
1.8
1.4
1.4
1.5
1.5
Volts
T
C
= 25 °C
MAX
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.75
2.75
2.75
2.75
mAmps
MAX
35
35
35
35
35
50
50
50
50
50
70
70
70
70
70
100
100
100
100
100
50
50
50
50
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
2
2
2
2
2
2
2
2
2
2
2
2
2
2
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Amps
Watts
Watts
Amps
60/50 Hz
120/100
120/100
120/100
120/100
120/100
120/100
120/100
120/100
120/100
120/100
200/167
200/167
200/167
200/167
200/167
200/167
200/167
200/167
200/167
200/167
250/220
250/220
350/300
350/300
Volts/µSec
TYP
2
2
2
2
2
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
Volts/µSec
T
C
=
100 °C
150
150
100
75
50
350
350
300
250
150
400
400
350
300
200
400
400
350
300
200
550
450
550
450
475
400
475
400
275
275
225
200
275
275
225
200
225
225
200
175
T
C
=
125 °C
µSec
TYP
3
3
3
3
3
3
3
3
3
3
4
4
4
4
4
4
4
4
4
4
3
3
3
3
60
60
60
60
60
60
60
60
60
60
166
166
166
166
166
166
166
166
166
166
260
260
508
508
70
70
70
70
70
70
70
70
70
70
100
100
100
100
100
100
100
100
100
100
100
100
100
100
Amps
2
Sec
Amps/µSec
MIN
Electrical Specification Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
For either polarity of MT2 with reference to MT1 terminal
For either polarity of gate voltage (V
GT
) with reference to MT1
terminal
See Gate Characteristics and Definition of Quadrants.
See Figure E2.1 through Figure E2.7 for current rating at specific
operating temperature.
See Figure E2.8 through Figure E2.10 for i
T
versus v
T
.
See Figure E2.12 for V
GT
versus T
C
.
See Figure E2.11 for I
GT
versus T
C
.
See Figure E2.14 for I
H
versus T
C
.
See Figure E2.13 for surge rating with specific durations.
(15) R
L
= 60
Ω
for 0.8 A to10 A triacs; R
L
= 30
Ω
for 15 A to 35 A triacs
(16) T
C
= T
J
for test conditions in off state
(17) I
GT
= 300 mA for 25 A and 35 A devices
(18) Quadrants I, II, III only
(19) Minimum non-trigger V
GT
at 125 °C is 0.2 V for all except 50 mA
MAX QIV devices which are 0.2 V at 110 °C.
Gate Characteristics
Teccor triacs may be turned on between gate and MT1 terminals
in the following ways:
•
•
In-phase signals (with standard AC line) using Quadrants I
and III
Application of unipolar pulses (gate always positive or nega-
tive), using Quadrants II and III with negative gate pulses and
Quadrants I and IV with positive gate pulses
However, due to higher gate requirements for Quadrant IV, it
is recommended that only negative pulses be applied. If pos-
itive pulses are required, see “Sensitive Triacs” section of
this catalog or contact the factory. Also, see
Figure AN1002.8, “Amplified Gate” Thyristor Circuit.
(10) See Figure E2.15 for t
gt
versus I
GT
.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) Initial on-state current = 200 mA dc for 0.8 A to10 A devices,
400 mA dc for 15 A to 35 A devices
(13) See Figure E2.1 through Figure E2.6 for maximum allowable case
temperature at maximum rated current.
(14) Pulse width
≤10
µ
s;
I
GT
≤
I
GTM
©2004 Littelfuse, Inc.
Thyristor Product Catalog
E2 - 5
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