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BLP7G22-10_15

Description
LDMOS driver transistor
File Size190KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLP7G22-10_15 Overview

LDMOS driver transistor

BLP7G22-10
LDMOS driver transistor
Rev. 2 — 30 May 2013
Product data sheet
1. Product profile
1.1 General description
10W plastic LDMOS power transistor for base station applications at frequencies from
700 MHz to 2700 MHz.
Table 1.
Application performance (multiple frequencies)
Typical RF performance at T
case
= 25
C; I
Dq
= 110 mA; in a class-AB application circuit.
Test signal
Pulsed CW
1-carrier W-CDMA
2-carrier W-CDMA
f
(MHz)
2700
748
748
2140
2140
[1]
I
Dq
(mA)
110
110
110
110
110
V
DS
(V)
28
28
28
28
28
P
L(AV)
(W)
2
0.7
2
0.7
2
G
p
(dB)
14.5
27.5
27.5
17.4
17.4
D
(%)
26
13.5
25
13
25
ACPR
5M
(dBc)
-
43
[1]
40
51
40
Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on CCDF;
RF performance at V
DS
= 28 V; I
Dq
= 110 mA.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
CDMA
W-CDMA
GSM EDGE
MC-GSM
LTE
WiMAX
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