UNISONIC TECHNOLOGIES CO., LTD
2N5401
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
PNP SILICON TRANSISTOR
* Collector-emitter voltage:
V
CEO
= -150V
* High current gain,
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
E
B
C
E
B
C
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
Ordering Number
Package
Lead Free
Halogen Free
2N5401L-x-AB3-R
2N5401G-x-AB3-R
SOT-89
2N5401L-x-T92-B
2N5401G-x-T92-B
TO-92
2N5401L-x-T92-K
2N5401G-x-T92-K
TO-92
2N5401L-x-T92-A-B
2N5401G-x-T92-A-B
TO-92
2N5401L-x-T92-A-K
2N5401G-x-T92-A-K
TO-92
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MARKING INFORMATION
PACKAGE
MARKING
SOT-89
TO-92
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2N5401
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25C , unless otherwise specified)
RATINGS
UNIT
-160
V
-150
V
-5
V
-600
mA
SOT-89
500
mW
Collector Dissipation
P
C
TO-92
625
mW
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT)
V
BE(SAT)
f
T
C
OB
NF
TEST CONDITIONS
I
C
= -100μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -120V, I
E
= 0
V
EB
= -3V, I
C
= 0
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -50mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
V
CE
= -10V, I
C
= -10mA
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= -0.25mA, V
CE
= -5V
R
S
= 1k, f = 10Hz ~ 15.7kHz
MIN
-160
-150
-5
TYP
MAX
UNIT
V
V
V
nA
nA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
-50
-50
80
80
80
400
-0.2
-0.5
-1
-1
100
400
6.0
8
V
V
V
V
MHz
pF
dB
Note: Pulse test: P
W
<300μs, Duty Cycle<2%
CLASSIFICATION OF h
FE2
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2N5401
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2N5401
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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