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SMBJ8.0-GT3

Description
Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size256KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

SMBJ8.0-GT3 Overview

Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN

SMBJ8.0-GT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Maximum breakdown voltage11.3 V
Minimum breakdown voltage8.99 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage8 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED




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Dim
A
B
C
D
E
F
G
H
Min
Max
Min
Max
3.30
3.94
4.06
4.70
1.91
2.11
0.152 0.305
5.08
5.59
2.13
2.44
0.051 0.203
0.76
1.27
in mm
0.130 0.155
0.160 0.185
0.075 0.083
0.006 0.012
0.2 0.220
0.084 0.096
0.002 0.008
0.029 0.05
In inch

                                                 

































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