Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, NPN, Silicon,
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Central Semiconductor |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compliant |
| Other features | LOW NOISE |
| Collector-based maximum capacity | 2.5 pF |
| Collector-emitter maximum voltage | 32 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 380 |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | MATTE TIN (315) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 10 |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 250 MHz |
| VCEsat-Max | 0.55 V |
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