JANTXV2N3822 datasheet, PDF - EEWORLD Datasheet

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JANTXV2N3822: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size53KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JANTXV2N3822 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN

JANTXV2N3822 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	8
Reach Compliance Code	_compli
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF
JESD-30 code	O-MBCY-W4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
Guideline	MIL-19500/375
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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TECHNICAL DATA

N-CHANNEL J-FET DEPLETION MODE

Qualified per MIL-PRF-19500/375

Devices

2N3821

2N3822

2N3823

Qualified Level

JANTX

JANTXV

MAXIMUM RATINGS

Parameters / Test Conditions

Gate-Source Voltage

Drain-Source Voltage

Drain-Gate Voltage

Gate Current

Power Dissipation

= +25

(1)

Operating Junction & Storage Temperature Range

Symbol

GSR

, T

stg

2N3821

2N3822

2N3823

Unit

300

-55 to +200

TO-72*

(TO-206AF)

*See appendix A for

package outline

(1) Derate linearly 1.7 mW/

C for T

+25

ELECTRICAL CHARACTERISTICS (T

= 25

C unless otherwise noted)

Parameters / Test Conditions

Symbol

Gate-Source Breakdown Voltage

= 0, I

= 1.0

µAdc

Gate Reverse Current

= 0, V

= 30 Vdc

= 0, V

= 20 Vdc

Zero-Gate-Voltage Drain Current

= 0, V

= 15 Vdc

2N3821, 2N3822

2N3823

2N3821, 2N3822

2N3823

2N3821

2N3822

2N3823

2N3821

2N3822

2N3823

2N3821

2N3822

2N3823

(BR)GSSR

Min.

Max.

Units

Vdc

ηA

GSSR

0.1

0.5

2.0

4.0

0.5

1.0

2.5

2.0

4.0

7.5

4.0

6.0

8.0

DSS

Gate-Source Voltage

= 15 Vdc, I

= 50 µAdc

= 15 Vdc, I

= 200 µAdc

= 15 Vdc, I

= 400 µAdc

Gate-Source Cutoff Voltage

= 15 Vdc, I

= 0.5

ηAdc

Vdc

GS(off)

Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JANTXV2N3822 Related Products

	JANTXV2N3822	JANTXV2N3823	JANTX2N3823	JANTX2N3821	JANTX2N3822	JANTXV2N3821
Description	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	BCY	BCY	BCY	BCY	BCY	BCY
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4
Contacts	8	8	8	8	8	8
Reach Compliance Code	_compli	not_compliant	not_compliant	not_compliant	_compli	_compli
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	50 V	30 V	30 V	50 V	50 V	50 V
FET technology	METAL-OXIDE SEMICONDUCTOR	JUNCTION	JUNCTION	JUNCTION	JUNCTION	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3 pF	2 pF	2 pF	3 pF	3 pF	3 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-206AF	TO-206AF	TO-206AF	TO-206AF	TO-206AF	TO-206AF
JESD-30 code	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	MIL-19500/375	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500/375
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Contains lead	-	-	Contains lead	Contains lead	Contains lead
Maximum operating temperature	200 °C	-	-	200 °C	200 °C	200 °C

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