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Datasheet> All Categories > Discrete semiconductor> The transistor> JANTXV2N3823
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JANTXV2N3823

Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size53KB，2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV2N3823 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN

JANTXV2N3823 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1916729880
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W4
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
FET technologyJUNCTION
Maximum feedback capacitance (Crss)2 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-206AF
JESD-30 codeO-MBCY-W4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
GuidelineMIL-19500
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON

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TECHNICAL DATA
N-CHANNEL J-FET DEPLETION MODE
Qualified per MIL-PRF-19500/375
Devices
2N3821
2N3822
2N3823
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Parameters / Test Conditions
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
T
A
= +25
0
C
(1)
Operating Junction & Storage Temperature Range
Symbol
V
GSR
V
DS
V
DG
I
GF
P
T
T
j
, T
stg
2N3821
2N3822
50
50
50
2N3823
30
30
30
Unit
V
V
V
mA
mW
0
C
10
300
-55 to +200
TO-72*
(TO-206AF)
*See appendix A for
package outline
(1) Derate linearly 1.7 mW/
0
C for T
A
+25
0
C.
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
µAdc
Gate Reverse Current
V
DS
= 0, V
GS
= 30 Vdc
V
DS
= 0, V
GS
= 20 Vdc
Zero-Gate-Voltage Drain Current
V
GS
= 0, V
DS
= 15 Vdc
2N3821, 2N3822
2N3823
2N3821, 2N3822
2N3823
2N3821
2N3822
2N3823
2N3821
2N3822
2N3823
2N3821
2N3822
2N3823
V
(BR)GSSR
Min.
50
30
Max.
Units
Vdc
ηA
I
GSSR
0.1
0.5
0.5
2.0
4.0
0.5
1.0
1.0
2.5
10
20
2.0
4.0
7.5
4.0
6.0
8.0
I
DSS
mA
Gate-Source Voltage
V
DS
= 15 Vdc, I
D
= 50 µAdc
V
DS
= 15 Vdc, I
D
= 200 µAdc
V
DS
= 15 Vdc, I
D
= 400 µAdc
Gate-Source Cutoff Voltage
V
DS
= 15 Vdc, I
D
= 0.5
ηAdc
V
GS
Vdc
V
GS(off)
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JANTXV2N3823 Related Products

JANTXV2N3823 JANTX2N3823 JANTX2N3821 JANTX2N3822 JANTXV2N3821 JANTXV2N3822
Description RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF, TO-72, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 4 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code BCY BCY BCY BCY BCY BCY
package instruction CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4
Contacts 8 8 8 8 8 8
Reach Compliance Code not_compliant not_compliant not_compliant _compli _compli _compli
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 30 V 30 V 50 V 50 V 50 V 50 V
FET technology JUNCTION JUNCTION JUNCTION JUNCTION METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 2 pF 2 pF 3 pF 3 pF 3 pF 3 pF
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-206AF TO-206AF TO-206AF TO-206AF TO-206AF TO-206AF
JESD-30 code O-MBCY-W4 O-MBCY-W4 O-MBCY-W4 O-MBCY-W4 O-MBCY-W4 O-MBCY-W4
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Package body material METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Guideline MIL-19500 MIL-19500 MIL-19500 MIL-19500 MIL-19500/375 MIL-19500/375
surface mount NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? - - Contains lead Contains lead Contains lead Contains lead
Maximum operating temperature - - 200 °C 200 °C 200 °C 200 °C

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