Intel
®
Wireless Flash Memory (W30)
28F640W30, 28F320W30, 28F128W30
Datasheet
Product Features
■
■
■
■
High Performance Read-While-Write/Erase
— Burst Frequency at 40 MHz
— 70 ns Initial Access Speed
— 25 ns Page-Mode Read Speed
— 20 ns Burst-Mode Read Speed
— Burst-Mode and Page-Mode in All Blocks
and across All Partition Boundaries
— Burst Suspend Feature
— Enhanced Factory Programming:
3.5 µs per Word Program Time
— Programmable WAIT Signal Polarity
Flash Power
— V
CC
= 1.70 V – 1.90 V
— V
CCQ
= 2.20 V – 3.30 V
— Standby Current (130 nm) = 8 µA (typ.)
— Read Current = 7 mA
(4 word burst, typical)
Flash Software
— 5 µs/9 µs (typ.) Program/Erase Suspend
Latency Time
— Intel
®
Flash Data Integrator (FDI) and
Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating Temperature:
–40 °C to +85 °C
— 100K Minimum Erase Cycles
— 130 nm ETOX™ VIII Process
— 180 nm ETOX™ VII Process
■
■
■
Flash Architecture
— Multiple 4-Mbit Partitions
— Dual Operation: RWW or RWE
— Parameter Block Size = 4-Kword
— Main block size = 32-Kword
— Top or Bottom Parameter Blocks
Flash Security
— 128-bit Protection Register: 64 Unique
Device Identifier Bits; 64 User OTP
Protection Register Bits
— Absolute Write Protection with V
PP
at
Ground
— Program and Erase Lockout during Power
Transitions
— Individual and Instantaneous Block
Locking/Unlocking with Lock-Down
Density and Packaging
— 130 nm: 32Mb, 64Mb, and 128Mb in VF
BGA Package; 64Mb, 128Mb in QUAD+
Package
— 180 nm: 32Mb and 128Mb Densities in VF
BGA Package; 64Mb Density in µBGA*
Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
— 16-bit Data Bus
The Intel
®
Wireless Flash Memory (W30) device combines state-of-the-art Intel
®
Flash technology to
provide a versatile memory solution for high performance, low power, board constraint memory
applications. The
W30 flash memory device
offers a multi-partition, dual-operation flash architecture
that enables the flash device to read from one partition while programming or erasing in another partition.
This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data
throughput rates compared to single partition devices. Two processors can interleave code execution,
because program and erase operations can now occur as background processes.
The
W30 flash memory device
incorporates an Enhanced Factory Programming (EFP) mode to improve
12 V factory programming performance. This feature helps eliminate manufacturing bottlenecks associated
with programming high-density flash memory devices. The EFP program time is 3.5 µs per word,
compared to the standard factory program time of 8.0 µs per word, so EFP mode saves significant factory
programming time for improved factory efficiency.
The
W30 flash memory device
also includes block lock-down and programmable WAIT signal polarity,
and is supported by an array of software tools.
Notice:
This document contains information on new products in production. The specifications
are subject to change without notice. Verify with your local Intel sales office that you have the
latest datasheet before finalizing a design.
Order Number: 290702, Revision: 011
June 2005
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL
®
PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS
ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES
RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT.
Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the
presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by
estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
Intel products are not intended for use in medical, life saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
The Intel
®
Wireless Flash Memory (W30) may contain design defects or errors known as errata which may cause the product to deviate from
published specifications. Current characterized errata are available on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800-
548-4725 or by visiting Intel's website at
http://www.intel.com.
Intel, ETOX, and the Intel logo are trademarks or registered trademarks of Intel Corporation or its subsidiaries in the United States and other countries.
*Other names and brands may be claimed as the property of others.
Copyright © 2005, Intel Corporation.All rights reserved.
June 2005
2
Intel
®
Wireless Flash Memory (W30)
Order Number: 290702, Revision: 011
Datasheet
28F640W30, 28F320W30, 28F128W30
Contents
1.0 Introduction
............................................................................................................................... 8
1.1
1.2
1.3
Document Purpose ............................................................................................................... 8
Nomenclature ....................................................................................................................... 8
Conventions .......................................................................................................................... 9
2.0 Functional Overview
............................................................................................................ 10
2.1
2.2
Overview ............................................................................................................................. 10
Memory Map and Partitioning ............................................................................................. 11
3.0 Package Information
............................................................................................................ 14
3.1
3.2
W30 Flash Memory Device – 130 nm Lithography ............................................................. 14
W30 Flash Memory Device – 180 nm Lithography ............................................................. 16
4.0 Ballout and Signal Descriptions
...................................................................................... 19
4.1
4.2
Signal Ballout ......................................................................................................................19
Signal Descriptions ............................................................................................................. 21
5.0 Maximum Ratings and Operating Conditions
...........................................................25
5.1
5.2
Absolute Maximum Ratings ................................................................................................ 25
Operating Conditions .......................................................................................................... 26
6.0 Electrical Specifications
..................................................................................................... 27
6.1
6.2
DC Current Characteristics .................................................................................................27
DC Voltage Characteristics.................................................................................................28
7.0 AC Characteristics
................................................................................................................ 29
7.1
7.2
7.3
7.4
Read Operations - 130 nm Lithography..............................................................................29
Read Operations - 180 nm Lithography..............................................................................30
AC Write Characteristics..................................................................................................... 40
Erase and Program Times .................................................................................................. 44
8.0 Power and Reset Specifications
.....................................................................................45
8.1
8.2
8.3
8.4
Active Power ....................................................................................................................... 45
Automatic Power Savings (APS) ........................................................................................ 45
Standby Power ................................................................................................................... 45
Power-Up/Down Characteristics ......................................................................................... 46
8.4.1 System Reset and RST# ....................................................................................... 46
8.4.2 VCC, VPP, and RST# Transitions .........................................................................46
Power Supply Decoupling................................................................................................... 46
Reset Specifications ........................................................................................................... 47
AC I/O Test Conditions ....................................................................................................... 48
Flash Device Capacitance .................................................................................................. 49
8.5
8.6
8.7
8.8
9.0 Flash Device Operations
.................................................................................................... 50
9.1
Bus Operations ................................................................................................................... 50
9.1.1 Read ......................................................................................................................50
9.1.2 Burst Suspend ....................................................................................................... 51
Datasheet
Intel
®
Wireless Flash Memory (W30)
Order Number: 290702, Revision: 011
June 2005
3
28F640W30, 28F320W30, 28F128W30
9.2
9.3
9.1.3 Standby.................................................................................................................. 51
9.1.4 Reset ..................................................................................................................... 52
9.1.5 Write ...................................................................................................................... 52
Flash Device Commands.................................................................................................... 52
Command Sequencing ....................................................................................................... 56
10.0 Read Operations
.................................................................................................................... 57
10.1
10.2
10.3
10.4
10.5
Read Array.......................................................................................................................... 57
Read Device ID................................................................................................................... 57
Read Query (CFI) ............................................................................................................... 58
Read Status Register.......................................................................................................... 58
Clear Status Register.......................................................................................................... 60
11.0 Program Operations
............................................................................................................. 61
11.1
11.2
11.3
Word Program .................................................................................................................... 61
Factory Programming ......................................................................................................... 63
Enhanced Factory Program (EFP) ..................................................................................... 63
11.3.1 EFP Requirements and Considerations ................................................................ 64
11.3.2 Setup ..................................................................................................................... 64
11.3.3 Program ................................................................................................................. 64
11.3.4 Verify...................................................................................................................... 65
11.3.5 Exit......................................................................................................................... 65
12.0 Program and Erase Operations
....................................................................................... 67
12.1
12.2
12.3
Program/Erase Suspend and Resume ............................................................................... 67
Block Erase......................................................................................................................... 70
Read-While-Write and Read-While-Erase .......................................................................... 72
13.0 Security Modes
....................................................................................................................... 73
13.1
Block Lock Operations........................................................................................................ 73
13.1.1 Lock ....................................................................................................................... 74
13.1.2 Unlock.................................................................................................................... 74
13.1.3 Lock-Down............................................................................................................. 75
13.1.4 Block Lock Status .................................................................................................. 75
13.1.5 Lock During Erase Suspend .................................................................................. 76
13.1.6 Status Register Error Checking ............................................................................. 76
13.1.7 WP# Lock-Down Control ....................................................................................... 76
Protection Register ............................................................................................................. 77
13.2.1 Reading the Protection Register............................................................................ 78
13.2.2 Programing the Protection Register....................................................................... 78
13.2.3 Locking the Protection Register............................................................................. 78
VPP Protection ................................................................................................................... 80
13.2
13.3
14.0 Set Read Configuration Register
.................................................................................... 81
14.1
14.2
14.3
14.4
14.5
14.6
Read Mode (RCR[15]) ........................................................................................................ 83
First Access Latency Count (RCR[13:11]).......................................................................... 83
14.2.1 Latency Count Settings.......................................................................................... 84
WAIT Signal Polarity (RCR[10]).......................................................................................... 85
WAIT Signal Function ......................................................................................................... 85
Data Hold (RCR[9])............................................................................................................. 86
WAIT Delay (RCR[8]) ......................................................................................................... 87
June 2005
4
Intel
®
Wireless Flash Memory (W30)
Order Number: 290702, Revision: 011
Datasheet
28F640W30, 28F320W30, 28F128W30
14.7
14.8
14.9
14.10
Burst Sequence (RCR[7]) ................................................................................................... 87
Clock Edge (RCR[6]) .......................................................................................................... 88
Burst Wrap (RCR[3])........................................................................................................... 89
Burst Length (RCR[2:0]) ..................................................................................................... 89
Appendix A
Appendix B
Appendix C
Write State Machine
........................................................................................... 90
Common Flash Interface
.................................................................................. 93
Ordering Information
....................................................................................... 103
Datasheet
Intel
®
Wireless Flash Memory (W30)
Order Number: 290702, Revision: 011
June 2005
5
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