PH28F640W30BD70 datasheet, PDF

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PH28F640W30BD70: DescriptionFlash, 4MX16, 70ns, PBGA56, 0.75 MM PITCH, LEAD FREE, VFBGA-56; Categorystorage storage; File Size960KB，104 Pages; ManufacturerIntel; Websitehttp://www.intel.com/; Environmental Compliance

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PH28F640W30BD70 Overview

Flash, 4MX16, 70ns, PBGA56, 0.75 MM PITCH, LEAD FREE, VFBGA-56

PH28F640W30BD70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	VFBGA, BGA56,7X8,30
Contacts	56
Reach Compliance Code	compli
ECCN code	3A991.B.1.A
Maximum access time	70 ns
Other features	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	NO
JESD-30 code	R-PBGA-B56
JESD-609 code	e1
length	9 mm
memory density	67108864 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	8,127
Number of terminals	56
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA56,7X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size	4 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	1.8,3 V
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1 mm
Department size	4K,32K
Maximum standby current	0.000005 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
switch bit	NO
type	NOR TYPE
width	7.7 mm
Base Number Matches	1

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Intel

Wireless Flash Memory (W30)

28F640W30, 28F320W30, 28F128W30

Datasheet

Product Features

■

High Performance Read-While-Write/Erase

— Burst Frequency at 40 MHz

— 70 ns Initial Access Speed

— 25 ns Page-Mode Read Speed

— 20 ns Burst-Mode Read Speed

— Burst-Mode and Page-Mode in All Blocks

and across All Partition Boundaries

— Burst Suspend Feature

— Enhanced Factory Programming:

3.5 µs per Word Program Time

— Programmable WAIT Signal Polarity

Flash Power

— V

= 1.70 V – 1.90 V

— V

CCQ

= 2.20 V – 3.30 V

— Standby Current (130 nm) = 8 µA (typ.)

— Read Current = 7 mA

(4 word burst, typical)

Flash Software

— 5 µs/9 µs (typ.) Program/Erase Suspend

Latency Time

— Intel

Flash Data Integrator (FDI) and

Common Flash Interface (CFI) Compatible

Quality and Reliability

— Operating Temperature:

–40 °C to +85 °C

— 100K Minimum Erase Cycles

— 130 nm ETOX™ VIII Process

— 180 nm ETOX™ VII Process

■

Flash Architecture

— Multiple 4-Mbit Partitions

— Dual Operation: RWW or RWE

— Parameter Block Size = 4-Kword

— Main block size = 32-Kword

— Top or Bottom Parameter Blocks

Flash Security

— 128-bit Protection Register: 64 Unique

Device Identifier Bits; 64 User OTP

Protection Register Bits

— Absolute Write Protection with V

Ground

— Program and Erase Lockout during Power

Transitions

— Individual and Instantaneous Block

Locking/Unlocking with Lock-Down

Density and Packaging

— 130 nm: 32Mb, 64Mb, and 128Mb in VF

BGA Package; 64Mb, 128Mb in QUAD+

Package

— 180 nm: 32Mb and 128Mb Densities in VF

BGA Package; 64Mb Density in µBGA*

Package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

— 16-bit Data Bus

The Intel

Wireless Flash Memory (W30) device combines state-of-the-art Intel

Flash technology to

provide a versatile memory solution for high performance, low power, board constraint memory

applications. The

W30 flash memory device

offers a multi-partition, dual-operation flash architecture

that enables the flash device to read from one partition while programming or erasing in another partition.

This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data

throughput rates compared to single partition devices. Two processors can interleave code execution,

because program and erase operations can now occur as background processes.

The

W30 flash memory device

incorporates an Enhanced Factory Programming (EFP) mode to improve

12 V factory programming performance. This feature helps eliminate manufacturing bottlenecks associated

with programming high-density flash memory devices. The EFP program time is 3.5 µs per word,

compared to the standard factory program time of 8.0 µs per word, so EFP mode saves significant factory

programming time for improved factory efficiency.

The

W30 flash memory device

also includes block lock-down and programmable WAIT signal polarity,

and is supported by an array of software tools.

Notice:

This document contains information on new products in production. The specifications

are subject to change without notice. Verify with your local Intel sales office that you have the

latest datasheet before finalizing a design.

Order Number: 290702, Revision: 011

June 2005

INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL

PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY

ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN

INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS

ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES

RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER

INTELLECTUAL PROPERTY RIGHT.

Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the

presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by

estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.

Intel products are not intended for use in medical, life saving, or life sustaining applications.

Intel may make changes to specifications and product descriptions at any time, without notice.

Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for

future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.

The Intel

Wireless Flash Memory (W30) may contain design defects or errors known as errata which may cause the product to deviate from

published specifications. Current characterized errata are available on request.

Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.

Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800-

548-4725 or by visiting Intel's website at

http://www.intel.com.

Intel, ETOX, and the Intel logo are trademarks or registered trademarks of Intel Corporation or its subsidiaries in the United States and other countries.

*Other names and brands may be claimed as the property of others.

June 2005

Intel

Wireless Flash Memory (W30)

Order Number: 290702, Revision: 011

Datasheet

28F640W30, 28F320W30, 28F128W30

Contents

1.0 Introduction

............................................................................................................................... 8

1.1

1.2

1.3

Document Purpose ............................................................................................................... 8

Nomenclature ....................................................................................................................... 8

Conventions .......................................................................................................................... 9

2.0 Functional Overview

............................................................................................................ 10

2.1

2.2

Overview ............................................................................................................................. 10

Memory Map and Partitioning ............................................................................................. 11

3.0 Package Information

............................................................................................................ 14

3.1

3.2

W30 Flash Memory Device – 130 nm Lithography ............................................................. 14

W30 Flash Memory Device – 180 nm Lithography ............................................................. 16

4.0 Ballout and Signal Descriptions

...................................................................................... 19

4.1

4.2

Signal Ballout ......................................................................................................................19

Signal Descriptions ............................................................................................................. 21

5.0 Maximum Ratings and Operating Conditions

...........................................................25

5.1

5.2

Absolute Maximum Ratings ................................................................................................ 25

Operating Conditions .......................................................................................................... 26

6.0 Electrical Specifications

..................................................................................................... 27

6.1

6.2

DC Current Characteristics .................................................................................................27

DC Voltage Characteristics.................................................................................................28

7.0 AC Characteristics

................................................................................................................ 29

7.1

7.2

7.3

7.4

Read Operations - 130 nm Lithography..............................................................................29

Read Operations - 180 nm Lithography..............................................................................30

AC Write Characteristics..................................................................................................... 40

Erase and Program Times .................................................................................................. 44

8.0 Power and Reset Specifications

.....................................................................................45

8.1

8.2

8.3

8.4

Active Power ....................................................................................................................... 45

Automatic Power Savings (APS) ........................................................................................ 45

Standby Power ................................................................................................................... 45

Power-Up/Down Characteristics ......................................................................................... 46

8.4.1 System Reset and RST# ....................................................................................... 46

8.4.2 VCC, VPP, and RST# Transitions .........................................................................46

Power Supply Decoupling................................................................................................... 46

Reset Specifications ........................................................................................................... 47

AC I/O Test Conditions ....................................................................................................... 48

Flash Device Capacitance .................................................................................................. 49

8.5

8.6

8.7

8.8

9.0 Flash Device Operations

.................................................................................................... 50

9.1

Bus Operations ................................................................................................................... 50

9.1.1 Read ......................................................................................................................50

9.1.2 Burst Suspend ....................................................................................................... 51

Datasheet

Intel

Wireless Flash Memory (W30)

Order Number: 290702, Revision: 011

June 2005

28F640W30, 28F320W30, 28F128W30

9.2

9.3

9.1.3 Standby.................................................................................................................. 51

9.1.4 Reset ..................................................................................................................... 52

9.1.5 Write ...................................................................................................................... 52

Flash Device Commands.................................................................................................... 52

Command Sequencing ....................................................................................................... 56

10.0 Read Operations

.................................................................................................................... 57

10.1

10.2

10.3

10.4

10.5

Read Array.......................................................................................................................... 57

Read Device ID................................................................................................................... 57

Read Query (CFI) ............................................................................................................... 58

Read Status Register.......................................................................................................... 58

Clear Status Register.......................................................................................................... 60

11.0 Program Operations

............................................................................................................. 61

11.1

11.2

11.3

Word Program .................................................................................................................... 61

Factory Programming ......................................................................................................... 63

Enhanced Factory Program (EFP) ..................................................................................... 63

11.3.1 EFP Requirements and Considerations ................................................................ 64

11.3.2 Setup ..................................................................................................................... 64

11.3.3 Program ................................................................................................................. 64

11.3.4 Verify...................................................................................................................... 65

11.3.5 Exit......................................................................................................................... 65

12.0 Program and Erase Operations

....................................................................................... 67

12.1

12.2

12.3

Program/Erase Suspend and Resume ............................................................................... 67

Block Erase......................................................................................................................... 70

Read-While-Write and Read-While-Erase .......................................................................... 72

13.0 Security Modes

....................................................................................................................... 73

13.1

Block Lock Operations........................................................................................................ 73

13.1.1 Lock ....................................................................................................................... 74

13.1.2 Unlock.................................................................................................................... 74

13.1.3 Lock-Down............................................................................................................. 75

13.1.4 Block Lock Status .................................................................................................. 75

13.1.5 Lock During Erase Suspend .................................................................................. 76

13.1.6 Status Register Error Checking ............................................................................. 76

13.1.7 WP# Lock-Down Control ....................................................................................... 76

Protection Register ............................................................................................................. 77

13.2.1 Reading the Protection Register............................................................................ 78

13.2.2 Programing the Protection Register....................................................................... 78

13.2.3 Locking the Protection Register............................................................................. 78

VPP Protection ................................................................................................................... 80

13.2

13.3

14.0 Set Read Configuration Register

.................................................................................... 81

14.1

14.2

14.3

14.4

14.5

14.6

Read Mode (RCR[15]) ........................................................................................................ 83

First Access Latency Count (RCR[13:11]).......................................................................... 83

14.2.1 Latency Count Settings.......................................................................................... 84

WAIT Signal Polarity (RCR[10]).......................................................................................... 85

WAIT Signal Function ......................................................................................................... 85

Data Hold (RCR[9])............................................................................................................. 86

WAIT Delay (RCR[8]) ......................................................................................................... 87

June 2005

Intel

Wireless Flash Memory (W30)

Order Number: 290702, Revision: 011

Datasheet

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