Features
•
•
•
•
•
•
No external components except PIN diode
Supply-voltage range: 4.5 V to 5.5 V
Automatic sensitivity adaptation (AGC)
Automatic strong signal adaptation (ATC)
Enhanced immunity against ambient light disturbances
Available for carrier frequencies between 30 kHz to 76 kHz; adjusted by Zener diode
fusing
•
TTL and CMOS compatible
•
Suitable min. burst length
≥
6 or 10 pulses/burst
Applications
•
Audio video applications
•
Home appliances
•
Remote control equipment
IR Receiver
ASSP
T2525
Description
The IC T2525 is a complete IR receiver for data communication developed and opti-
mized for use in carrier-frequency-modulated transmission applications. Its function
can be described using the block diagram (see figure 1). The input stage meets two
main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly,
the pulsed photo-current signals are transformed into a voltage by a special circuit
which is optimized for low-noise applications. After amplification by a
controlled gain
amplifier
(CGA), the signals have to pass a tuned integrated narrow bandpass filter
with a center frequency f
0
which is equivalent to the chosen carrier frequency of the
input signal. The demodulator is used to convert the input burst signal into a digital
envelope output pulse and to evaluate the signal information quality, i.e. unwanted
pulses will be suppressed at the output pin. All this is done by means of an integrated
dynamic feedback circuit which varies the gain as a function of the present environ-
mental condition (ambient light, modulated lamps etc.). Other special features are
used to adapt to the current application to secure best transmission quality. The
T2525 operates in a supply-voltage range of 4.5 V to 5.5 V.
Block Diagram
Figure 1.
VS
IN
Input
CGA &
filter
Demodulator
OUT
µC
Oscillator
Carrier frequency f0
AGC / ATC & digital
control
Modulated IR signal
min 6/10 pulses
GND
Rev. A3, 17-Oct-01
Preliminary Information
1 (13)
Preliminary Information
Ordering Information
Extended Type
Number
T2525N0xx
1)
-yyy
5)
T2525N1xx
1)
-DDW
T2525N2xx
1)
-yyy
5
T2525N3xx
1)
-DDW
T2525N6xx
1)
-yyy
5
T2525N7xx
1)
-DDW
Notes:
1.
2.
3.
4.
5.
PL
2)
2
1
2
1
2
1
R
PU3)
30
30
40
40
30
30
D
4)
2090
2090
1373
1373
3415
3415
Type
Standard type:
≥10
pulses, enhanced sensibility, high data rate
Standard type:
≥10
pulses, enhanced sensibility, high data rate
Lamp type:
≥10
pulses, enhanced suppression of disturbances, secure
data transmission
Lamp type:
≥10
pulses, enhanced suppression of disturbances, secure
data transmission
Short burst type:
≥6
pulses, enhanced data rate
Short burst type:
≥6
pulses, enhanced data rate
xx means the used carrier frequency value f
0
30,33,36,38,40,44 ,56 kHz.(76 kHz type on request)
Two pad layout versions (see figures 2 and 3) available for different assembly demand
Integrated pull-up resistor at PIN OUT (see electrical characteristics)
Typical data transmission rate up to bit/s with f
0
= 56 kHz, V
S
= 5 V (see figure 7)
yyy means kind of packaging:
.................... .......DDW -> unsawn wafers in box
.................... .......TAS -> SO8 in stick
.................... .......TAQ -> SO8 taped and reeled
.................... .......6AQ -> (on request, not standard; TSSOP8 taped 1and reeled)
Samples in SO8 package are available as T2525N038, T2525N238 and T2525N638.
Pad Layout
Figure 2.
Pad layout 1 (DDW only)
GND
IN
OUT
T2525
VS
FUSING
2 (13)
T2525
Rev. A3, 17-Oct-01
T2525
Figure 3.
Pad layout 2 (DDW, SO8 or TSSOP8)
(6)
GND
(5)
IN
(1)
VS
T2525
(3)
OUT
FUSING
Pin Description
Pin
1
2
3
4
5
6
7
8
Symbol
VS
n.c.
OUT
n.c.
IN
GND
n.c.
n.c.
Supply voltage
Not connected
Data output
Not connected
Input PIN-diode
Ground
Not connected
Not connected
Function
Figure 4.
Pinning SO8 and TSSOP8
VS
n.c.
OUT
n.c.
1
2
3
4
8
7
6
5
n.c.
n.c.
GND
IN
Preliminary Information
Rev. A3, 17-Oct-01
3 (13)
Preliminary Information
Absolute Maximum Ratings
Parameter
Supply voltage
Supply current
Input voltage
Input DC current at V
S
= 5 V
Output voltageV
O
-0.3 to V
S
V
Output current
Operating temperature
Storage temperature
Power dissipation at T
amb
= 25°C
Symbol
V
S
I
S
V
IN
I
IN
V
O
I
O
T
amb
T
stg
P
tot
30
Value
-0.3 to 6
3
-0.3 to V
S
0.75
-0.3 to V
S
Unit
V
mA
V
mA
V
mA
°C
°C
mW
Thermal Resistance
Parameter
Junction ambient SO8
Junction ambient TSSOP8
Symbol
R
thJA
R
thJA
Value
130
tbd
Unit
k/W
K/W
Electrical Characteristics
Tamb = -25 to 85°C, VS = 4.5 to 5.5
V unless otherwise specified.
No.
1
1.1
1.2
2
2.1
2.2
2.3
2.4
3
3.1
3.2
Parameters
Supply
Supply-voltage range
Supply current
Output
Internal pull-up
resistor
1)
Output voltage low
Output voltage high
Output current
clamping
Input
Input DC current
Input DC-current; see
figure 6
V
IN
= 0; see figure 11
V
IN
= 0; Vs = 5V,
T
amb
= 25°C
5
5
I
IN_DCMAX
I
IN_DCMAX
-85
-530
-960
µA
µA
C
B
R
2
= 0; see figure 11
T
amb
= 25°C;
see figure 11
I
L
= 2 mA;
see figure 11
1,3
3,6
3,1
3,6
R
PU
V
OL
V
OH
I
OCL
V
S
-
0.25
8
30/40
250
Vs
kΩ
mV
V
mA
A
B
B
B
I
IN
=0
1
1
V
S
I
S
4.5
0.8
5
1.1
5.5
1.3
V
mA
C
B
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT
3. After transformation of input current into voltage
4 (13)
T2525
Rev. A3, 17-Oct-01
T2525
Electrical Characteristics
Tamb = -25 to 85°C, VS = 4.5 to 5.5
V unless otherwise specified.
No.
3.3
Parameters
Min. detection
threshold current; see
figure 5
Test Conditions
Test signal:
see figure 10
V
S
= 5 V,
T
amb
= 25°C,
I
IN_DC
=1µA;
square pp,
burst N=16,
f=f
0
; t
PER
= 10ms,
Fig. 10;
BER = 50
2)
Test signal:
see figure 10
VS = 5 V, T
amb
= 25°C,
I
IN_DC
= 1µA,
square pp,
burst N = 16,
f = f0; t
PER
= 10 ms,
Fig. 10;
BER = 50%
2)
Test signal:
see figure 10
V
S
= 5V, T
amb
= 25°C,
I
IN_DC
= 1µA;
square pp,
burst N = 16,
f = f
0
; t
PER
= 10ms,
Fig. 10; BER=5%
2)
Pin
3
Symbol
I
Eemin
Min.
Typ.
-520
Max.
Unit
pA
Type*
B
3.4
Min. detection
threshold current with
AC current
disturbance
IIN_AC100 = 3
µA
at
100 Hz
3
I
Eemin
-800
pA
C
3.5
Max. detection
threshold current with
V
IN
> 0V
3
I
Eemax
-400
µA
D
4
4.1
4.2
4.3
Controlled Amplifier and Filter
Max. value of variable
gain (CGA)
Min. value of variable
gain (CGA)
Total internal
amplification
3)
G
VARMAX
G
VARMIN
G
MAX
51
-5
71
dB
dB
dB
D
D
D
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT
3. After transformation of input current into voltage
Preliminary Information
Rev. A3, 17-Oct-01
5 (13)
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