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Datasheet> All Categories > Discrete semiconductor> diode> BYW32/4
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BYW32/4

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size124KB，6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BYW32/4 Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BYW32/4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeDO-204
package instructionE-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresPATENTED DEVICE, METALLURGICALLY BONDED
applicationFAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-204AP
JESD-30 codeE-LALF-W2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum output current2 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.2 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN SILVER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

BYW32/4 Preview

BYW32 / 33 / 34 / 35 / 36
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
Features
•
•
•
•
•
•
Glass passivated junction
Hermetically sealed package
e2
Low reverse current
Soft recovery characteristics
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
Mechanical Data
Case:
SOD-57 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 369 mg
Parts Table
Part
BYW32
BYW33
BYW34
BYW35
BYW36
Type differentiation
V
R
= 200 V; I
FAV
= 2 A
V
R
= 300 V; I
FAV
= 2 A
V
R
= 400 V; I
FAV
= 2 A
V
R
= 500 V; I
FAV
= 2 A
V
R
= 600 V; I
FAV
= 2 A
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
BYW32
BYW33
BYW34
BYW35
BYW36
Peak forward surge current
Repetitive peak forward current
t
p
= 10 ms, half sinewave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
Value
200
300
400
500
600
50
12
Unit
V
V
V
V
V
A
A
Document Number 86048
Rev. 1.6, 13-Apr-05
www.vishay.com
1
BYW32 / 33 / 34 / 35 / 36
Vishay Semiconductors
Parameter
Average forward current
Junction and storage
temperature range
Non repetitive reverse
avalanche energy
I
(BR)R
= 0.4 A
Test condition
ϕ
= 180 °
Part
Symbol
I
FAV
T
j
= T
stg
E
R
Value
2
- 55 to + 175
10
Unit
A
°C
mJ
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing
25 mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse recovery time
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
Test condition
Symbol
V
F
I
R
I
R
t
rr
Min
Typ.
0.95
1
60
Max
1.1
5
150
200
Unit
V
µA
µA
ns
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
R
thJA
- Therm. Resist. Junction/Ambient (K/W)
120
100.000
100
– Forward Current (A)
10.000
T
j
= 175 °C
1.000
T
j
= 25 °C
0.100
0.010
0.001
0.0
80
60
l
40
20
0
0
5
10
15
T
L
= constant
20
25
30
l - Lead Length ( mm )
l
I
F
0.5
94 9552
16345
1.0
1.5
2.0
2.5
V
F
– Forward Voltage ( V )
3.0
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 86048
Rev. 1.6, 13-Apr-05
BYW32 / 33 / 34 / 35 / 36
Vishay Semiconductors
I
FAV
–Average Forward Current( A )
V
R
= V
RRM
half sinewave
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80 100 120 140 160 180
T
amb
– Ambient Temperature ( °C )
R
thJA
= 100 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
l = 10 mm
P – Reverse Power Dissipation ( mW )
R
2.5
300
V
R
= V
RRM
250
200
150
100
50
0
25
50
75
100 125 150 175
T
j
– Junction Temperature ( °C )
P
R
–Limit
@100 % V
R
P
R
–Limit
@80 % V
R
16346
16348
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
C
D
– Diode Capacitance ( pF )
40
V
R
= V
RRM
35
30
25
20
15
10
5
0
0.1
16349
f = 1 MHz
I
R
– Reverse Current (A )
100
10
1
25
16347
50
75
100 125 150 175
T
j
– Junction Temperature (°C )
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
Figure 4. Reverse Current vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Z
thp
–Thermal Resistance for Pulse Cond.(K/W)
1000
V
RRM
= 600 V
R
thJA
= 100 K/W
100
t
p
/T = 0.5
t
p
/T = 0.2
10
t
p
/T = 0.1
t
p
/T = 0.02
t
p
/T = 0.01
1
10
–5
10
–4
10
–3
10
–2
Single pulse
100 °C
10
–1
10
0
10
1
10
0
10
1
I
FRM
– Repetitive Peak
Forward Current ( A )
50 °C
70 °C
T
amb
= 25 °C
45 °C
94 9561
t
p
– Pulse Length ( s )
Figure 7. Thermal Response
Document Number 86048
Rev. 1.6, 13-Apr-05
www.vishay.com
3
BYW32 / 33 / 34 / 35 / 36
Vishay Semiconductors
Package Dimensions in mm (Inches)
Sintered
Glass Case
SOD-57
3.6 (0.140)max.
Cathode Identification
ISO Method E
94 9538
0.82 (0.032) max.
26(1.014) min.
4.0 (0.156) max.
26(1.014) min.
www.vishay.com
4
Document Number 86048
Rev. 1.6, 13-Apr-05
BYW32 / 33 / 34 / 35 / 36
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 86048
Rev. 1.6, 13-Apr-05
www.vishay.com
5
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BYW32/4 Related Products

BYW32/4 BYW32-E3/54
Description Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Maker Vishay Vishay
Parts packaging code DO-204 DO-204
package instruction E-LALF-W2 E-LALF-W2
Contacts 2 2
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Other features PATENTED DEVICE, METALLURGICALLY BONDED PATENTED DEVICE, METALLURGICALLY BONDED
application FAST SOFT RECOVERY FAST SOFT RECOVERY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-204AP DO-204AP
JESD-30 code E-LALF-W2 E-LALF-W2
JESD-609 code e2 e2
Maximum non-repetitive peak forward current 50 A 50 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum output current 2 A 2 A
Package body material GLASS GLASS
Package shape ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 200 V
Maximum reverse recovery time 0.2 µs 0.2 µs
surface mount NO NO
technology AVALANCHE AVALANCHE
Terminal surface TIN SILVER TIN SILVER
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL

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