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2N6649

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size822KB,5 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric Compare View All

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2N6649 Overview

Transistor

2N6649 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)10 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)27 W
surface mountNO
Nominal transition frequency (fT)20 MHz
Base Number Matches1

2N6649 Related Products

2N6649 2N4898 2N4897 2N5606
Description Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow
Maximum collector current (IC) 10 A 1 A 5 A 5 A
Configuration DARLINGTON Single Single Single
Minimum DC current gain (hFE) 1000 20 40 70
Maximum operating temperature 150 °C 175 °C 175 °C 175 °C
Polarity/channel type PNP PNP NPN NPN
Maximum power dissipation(Abs) 27 W 25 W 0.8 W 25 W
surface mount NO NO NO NO
Nominal transition frequency (fT) 20 MHz 0.03 MHz 50 MHz 70 MHz
Base Number Matches 1 1 1 1
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