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2N5606

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size822KB,5 Pages
ManufacturerAdvanced Semiconductor, Inc.
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2N5606 Overview

Transistor

2N5606 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)5 A
ConfigurationSingle
Minimum DC current gain (hFE)70
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)25 W
surface mountNO
Nominal transition frequency (fT)70 MHz
Base Number Matches1

2N5606 Related Products

2N5606 2N4898 2N6649 2N4897
Description Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow
Maximum collector current (IC) 5 A 1 A 10 A 5 A
Configuration Single Single DARLINGTON Single
Minimum DC current gain (hFE) 70 20 1000 40
Maximum operating temperature 175 °C 175 °C 150 °C 175 °C
Polarity/channel type NPN PNP PNP NPN
Maximum power dissipation(Abs) 25 W 25 W 27 W 0.8 W
surface mount NO NO NO NO
Nominal transition frequency (fT) 70 MHz 0.03 MHz 20 MHz 50 MHz
Base Number Matches 1 1 1 1
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