Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4982
DESCRIPTION
・With
ITO-220 package
・Switching
power transistor
・Low
collector saturation voltage
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
固电
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
导½
半
CONDITIONS
Open emitter
Open base
Collector current-Peak
Base current
Base current-peak
HAN
INC
SEM
GE
Open collector
ON
IC
OR
DUT
VALUE
100
80
7
10
20
1.5
2
UNIT
V
V
V
A
A
A
A
W
℃
℃
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
25
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
5.0
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4982
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
At rated volatge
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
At rated volatge
I
C
=5A ; V
CE
=2V
I
C
=1A ; V
CE
=10V
70
0.1
mA
0.1
mA
CONDITIONS
I
C
=0.1A ;I
B
=0
I
C
=5A; I
B
=0.25A
I
C
=5A; I
B
=0.25A
MIN
80
0.3
1.2
TYP.
MAX
UNIT
V
V
V
Switching times
t
on
t
s
t
f
固电
Fall time
导½
半
Turn-on time
Storage time
HAN
INC
SEM
GE
ON
IC
OR
DUT
50
0.3
1.5
0.2
MHz
μs
μs
μs
I
C
=5A;I
B1
=0.5A
I
B2
=0.5A ,R
L
=5Ω
V
BB2
=4V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4982
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
京公网安备 11010802033920号
EEWORLD
