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P480CH26E8G0

Description
Silicon Controlled Rectifier, 2200 A, 2600 V, SCR, 101A223, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size341KB,13 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

P480CH26E8G0 Overview

Silicon Controlled Rectifier, 2200 A, 2600 V, SCR, 101A223, 3 PIN

P480CH26E8G0 Parametric

Parameter NameAttribute value
MakerIXYS
package instructionDISK BUTTON, O-CXDB-X3
Contacts3
Reach Compliance Codeunknown
Nominal circuit commutation break time280 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage3 V
Maximum holding current1000 mA
JESD-30 codeO-CXDB-X3
Maximum leakage current100 mA
On-state non-repetitive peak current10600 A
Number of components1
Number of terminals3
Maximum on-state current2010000 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current2200 A
Off-state repetitive peak voltage2600 V
Repeated peak reverse voltage2600 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR
WESTCODE
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
Date:- 9 Dec, 1999
Rat. Rep:- 99T16
Issue:- 1
Fast Turn-off Thyristor
Types P480CH20 to P480CH32
MAXIMUM
LIMITS
2000-3200
2000-3200
2000-3200
2100-3300
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
2
It
2
It
di
T
/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current, T
sink
=55°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, 25°C, (note 2)
D.C. on-state current, 25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
2
I t capacity for fusing t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
2
I t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
1115
770
470
2200
1180
10.65
11.7
3
567×10
3
686×10
300
600
5
4
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
2
As
2
As
A/µs
A/µs
V
W
W
V
°C
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase;50Hz, 180° half-sinewave.
3)
Single side cooled, single phase;50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
7)
Rated V
DRM
.
Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1
Page 1 of 13
December, 1999
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