LF411MDS datasheet, PDF - EEWORLD Datasheet

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LF411MDS: DescriptionIC,OP-AMP,SINGLE,BIPOLAR, RAD HARD,DIE; CategoryAnalog mixed-signal IC Amplifier circuit; File Size443KB，11 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com; Environmental Compliance

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LF411MDS Overview

IC,OP-AMP,SINGLE,BIPOLAR, RAD HARD,DIE

LF411MDS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	National Semiconductor（TI ）
package instruction	, DIE OR CHIP
Reach Compliance Code	compliant
Amplifier type	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK
Maximum bias current (IIB) at 25C	0.0002 µA
frequency compensation	YES
Maximum input offset voltage	3700 µV
low-bias	YES
low-dissonance	NO
micropower	NO
Humidity sensitivity level	1
Nominal Negative Supply Voltage (Vsup)	-15 V
Number of functions	1
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Encapsulate equivalent code	DIE OR CHIP
power	NO
power supply	+-15 V
Programmable power	NO
Certification status	Not Qualified
Filter level	38535V;38534K;883S
minimum slew rate	8 V/us
Maximum slew rate	3.4 mA
Supply voltage upper limit	18 V
Nominal supply voltage (Vsup)	15 V
technology	BIPOLAR
Temperature level	MILITARY
Minimum voltage gain	15000
broadband	NO

LF411MDS Related Products

	LF411MDS	LF411MDC	LF411MWG-QMLV
Description	IC,OP-AMP,SINGLE,BIPOLAR, RAD HARD,DIE	IC OP-AMP, 2000 uV OFFSET-MAX, 4 MHz BAND WIDTH, UUC, DIE, Operational Amplifier	IC OP-AMP, 2000 uV OFFSET-MAX, 4 MHz BAND WIDTH, CDSO10, CERAMIC, SOIC-10, Operational Amplifier
Is it Rohs certified?	conform to	conform to	incompatible
Maker	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）
package instruction	, DIE OR CHIP	DIE, DIE OR CHIP	CERAMIC, SOIC-10
Reach Compliance Code	compliant	compliant	not_compliant
Amplifier type	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER
Maximum input offset voltage	3700 µV	2000 µV	2000 µV
Humidity sensitivity level	1	1	1
Nominal Negative Supply Voltage (Vsup)	-15 V	-15 V	-15 V
Number of functions	1	1	1
Maximum operating temperature	125 °C	70 °C	125 °C
Minimum operating temperature	-55 °C	-	-55 °C
Certification status	Not Qualified	Not Qualified	Not Qualified
Supply voltage upper limit	18 V	18 V	18 V
Nominal supply voltage (Vsup)	15 V	15 V	15 V
technology	BIPOLAR	BIPOLAR	BIPOLAR
Temperature level	MILITARY	COMMERCIAL	MILITARY
Architecture	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	-
Maximum bias current (IIB) at 25C	0.0002 µA	0.0002 µA	-
frequency compensation	YES	YES	-
low-bias	YES	YES	-
low-dissonance	NO	NO	-
Encapsulate equivalent code	DIE OR CHIP	DIE OR CHIP	-
power supply	+-15 V	+-15 V	-
Filter level	38535V;38534K;883S	-	MIL-PRF-38535 Class V
minimum slew rate	8 V/us	8 V/us	-
Maximum slew rate	3.4 mA	3.4 mA	-
Minimum voltage gain	15000	15000	-
Parts packaging code	-	WAFER	SOIC
ECCN code	-	EAR99	EAR99
Maximum average bias current (IIB)	-	0.0002 µA	0.0002 µA
Nominal Common Mode Rejection Ratio	-	100 dB	100 dB
JESD-30 code	-	X-XUUC-N	R-GDSO-G10
Negative supply voltage upper limit	-	-18 V	-18 V
Package body material	-	UNSPECIFIED	CERAMIC, GLASS-SEALED
encapsulated code	-	DIE	SOP
Package shape	-	UNSPECIFIED	RECTANGULAR
Package form	-	UNCASED CHIP	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	260	260
Nominal slew rate	-	15 V/us	15 V/us
surface mount	-	YES	YES
Terminal form	-	NO LEAD	GULL WING
Terminal location	-	UPPER	DUAL
Maximum time at peak reflow temperature	-	40	40
Nominal Uniform Gain Bandwidth	-	4000 kHz	4000 kHz
Base Number Matches	-	1	1

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