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2SK2559-4000

Description
Power Field-Effect Transistor, 10A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size72KB,1 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

2SK2559-4000 Overview

Power Field-Effect Transistor, 10A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN

2SK2559-4000 Parametric

Parameter NameAttribute value
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
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