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BSS127L-AE2-R

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size230KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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BSS127L-AE2-R Overview

Small Signal Bipolar Transistor

BSS127L-AE2-R Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instruction,
Reach Compliance Codeunknown

BSS127L-AE2-R Preview

UNISONIC TECHNOLOGIES CO., LTD
BSS127
0.021A, 600V
SMALL-SIGNAL-TRANSISTOR
DESCRIPTION
Power MOSFET
The UTC
BSS127
is an enhancement N-channel mode Power
FET, it uses UTC’s advanced technology to provide customers ultra
high switching speed and ultra low gate charge.
FEATURES
* R
DS(ON)
<600Ω @ V
GS
= 4.5V, I
D
=0.016A
R
DS(ON)
<500Ω@ V
GS
=10V, I
D
=0.016A
* Ultra Low Gate Charge (Typical 140nC)
* Ultra High Switching Speed
SYMBOL
ORDERING INFORMATION
Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
BSS127L-AE2-R
BSS127G-AE2-R
BSS127L-AE3-R
BSS127G-AE3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-824.C
BSS127
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
600
V
±20
V
T
A
=25°C
0.021
A
Continuous
I
D
Drain Current
T
A
=70°C
0.017
A
Pulsed (T
A
=25°C)
I
DM
0.09
A
Peak Diode Recovery dv/dt
dv/dt
6
kV/µs
Power Dissipation (T
A
=25°C )
P
D
0.3
W
Junction Temperature
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
SYMBOL
θ
JA
RATINGS
325
UNIT
°C/W
PARAMETER
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
GSS
I
D(OFF)
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
GS
=0V, V
DS
=600V, T
J
=25°C
V
GS
=0V, V
DS
=600V, T
J
=150°C
MIN
600
+10
-10
+100
-100
0.1
10
TYP MAX UNIT
V
nA
nA
µA
µA
V
S
pF
pF
pF
nC
nC
nC
V
ns
ns
ns
ns
A
A
V
ns
µC
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Forward
Gate-Source Leakage Current
Reverse
Drain-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
g
FS
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Gate to Source Charge
Q
GS
V
GS
=0~10V, V
DS
=300V,
I
D
=0.01A
Gate to Drain Charge
Q
GD
Gate Plateau Voltage
V
plateau
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=300V, V
GS
=10V,
I
D
=0.01A, R
G
=6Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
T
A
=25°C
Maximum Body-Diode Pulsed Current
I
SM
T
A
=25°C
Drain-Source Diode Forward Voltage
V
SD
I
F
=0.016A, V
GS
=0V, T
J
=25°C
Body Diode Reverse Recovery Time
t
RR
V
R
=300V, I
F
=0.016A,
dI
F
/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
RR
V
DS
=V
GS
, I
D
=8µA
1.4
2.0
2.6
V
GS
=4.5V, I
D
=0.016A
330 600
V
GS
=10V, I
D
=0.016A
310 500
|V
DS
|>2|I
D
|R
DS(ON)MAX
, I
D
=0.01A 0.007 0.015
21
2.4
1.0
0.07
0.31
0.65
3.56
6.1
9.7
14
115
28
3
1.5
0.10
0.5
1.0
19.0
14.5
21
170
0.016
0.09
0.82 1.2
160 240
13.2 19.8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-824.C
BSS127
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-824.C
BSS127
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, I
D
(µA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Drain Current, I
D
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, I
D
(mA)
Drain Current, I
D
(µA)
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