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JANS2N7236

Description
Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size148KB,21 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

JANS2N7236 Overview

Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

JANS2N7236 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionHERMETIC SEALED PACKAGE-3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)18 A
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.22 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)72 A
Certification statusQualified
GuidelineMIL-19500/595
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
The documentation and process conversion
measures necessary to comply with this document
shall be completed by 20 January 2014.
INCH-POUND
MIL-PRF-19500/595K
20 November 2013
SUPERSEDING
MIL-PRF-19500/595J
25 October 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
TRANSISTOR, P-CHANNEL, SILICON,
TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product
assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum
avalanche current (IAR).
1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (TO-267AB) for surface mount devices, and figure 3
and 4 for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings (T
C
= +25C, unless otherwise specified).
Min
Type
P
T
(1)
T
C
=
+25C
W
2N7236, 2N7236U
2N7237, 2N7237U
See notes next page.
125
125
P
T
T
A
=
+25C
W
4.0
4.0
R
JC
(2)
C/W
1.0
1.0
V
(BR)DSS
V
GS
= 0
I
D
= -1.0
mA dc
V dc
-100
-200
V
GS
I
D1
(3) (4) I
D2
(3) (4)
T
C
=
T
C
=
+25C
+100C
A dc
-18
-11
A dc
-11
-7
I
S
I
DM
(5)
T
J
and
T
STG
C
-55 to +150
-55 to +150
V dc
20
20
A dc A (pk)
-18
-11
-72
-44
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil/.
AMSC N/A
FSC 5961

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