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GE28F640C3TC100

Description
Flash, 4MX16, 100ns, PBGA48, CSP, VFBGA-48
Categorystorage    storage   
File Size485KB,76 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

GE28F640C3TC100 Overview

Flash, 4MX16, 100ns, PBGA48, CSP, VFBGA-48

GE28F640C3TC100 Parametric

Parameter NameAttribute value
Parts packaging codeBGA
package instructionVFBGA,
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time100 ns
Other featuresUSER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK
startup blockTOP
JESD-30 codeR-PBGA-B48
length9 mm
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
width7.7 mm
Base Number Matches1
3-Volt Advanced+ Boot Block Flash
Memory
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Preliminary Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V–3.6 V Read/Program/Erase
— 12 V for Fast Production Programming
128-bit Protection Register
— 64-bit Unique Device Identifier
— 64-bit User Programmable OTP Cells
1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
— Reduces Overall System Power
Extended Cycling Capability
— Minimum 100,000 Block Erase Cycles
High Performance
— 2.7 V–3.6 V: 70 ns Max Access Time
Supports Intel
®
Flash Data Integrator
Software
— Flash Memory Manager
— System Interrupt Manager
— Supports Parameter Storage, Streaming
Data (e.g., voice)
Optimized Architecture for Code Plus
Data Storage
— Eight 4-Kword Blocks, Top or Bottom
Locations
— Up to One Hundred-Twenty-Seven 32-
Kword Blocks
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Automated Word/Byte Program and
Block Erase
— Command User Interface
— Status Registers
Flexible Block Locking
— Lock/Unlock Any Block
— Full Protection on Power-Up
— WP# Pin for Hardware Block Protection
— V
PP
= GND Option
— V
CC
Lockout Voltage
Cross-Compatible Command Support
— Intel Basic Command Set
— Common Flash Interface
Standard Surface Mount Packaging
— 48-Ball CSP Packages
— 64-Ball Easy BGA Packages
— 48-Lead TSOP Package
Low Power Consumption
— 9 mA Typical Read Power
— 7 µ A Typical Standby Power with
Automatic Power Savings Feature
ETOX™ VIII (0.13
µm)
Flash
Technology
— 32- and 64-Mbit
12 V Fast Production Program
Extended Temperature Operation
— –40 °C to +85 °C
ETOX™ VII (0.18
µm)
Flash Technology
— 16-, 32-, 64-Mbit
ETOX™ VI (0.25
µm)
Flash Technology
— 8-, 16- and 32-Mbit
The 3-Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.13
µm
and
0.18
µm
technologies, represents a feature-rich solution for low-power applications. 3-Volt
Advanced+ Boot Block Flash memory devices incorporate low-voltage capability (2.7 V read,
program and erase) with high-speed, low-power operation. Flexible block locking allows any
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290645-012
October 2001
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