To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR <TRIAC> >
MITSUBISHI SEMICONDUCTOR <TRIAC
BCR08AM
BCR08AM
LOW POWER USE
LOW POWER USE
PLANAR PASSIVATION TYPE
PLANAR PASSIVATION TYPE
BCR08AM
OUTLINE DRAWING
φ5.0
MAX.
Dimensions
in mm
➁
➂
VOLTAGE
CLASS
TYPE
NAME
➀
T
1
TERMINAL
➁
T
2
TERMINAL
➂
GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
1.3
12.5 MIN.
➀
5.0 MAX.
0.8
8
0.26
1
0.1
6
0.5
0.23
➀ ➂ ➁
• I
T (RMS)
..................................................................... 0.8A
• V
DRM
....................................................................... 600V
• I
RGT I
, I
RGT III
............................................................ 5mA
APPLICATION
Electric fan, air cleaner, other general purpose control applications
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=56°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
–40 ~ +125
–40 ~ +125
3.9 MAX.
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
½1.
Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
DRM
V
TM
V
RGT I
V
RGT III
I
RGT I
I
RGT III
V
GD
R
th (j-c)
(dv/dt)
c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
½2
Gate trigger current
½2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
½4
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=1.2A, Instantaneous measurement
II
III
II
III
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=125°C, V
D
=1/2V
DRM
Junction to
T
j
=125°C
case
½3
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Min.
—
—
—
—
—
—
0.1
—
0.5
Typ.
—
—
—
—
—
—
—
—
—
Max.
1.0
2.0
2.0
2.0
5
5
—
60
—
Unit
mA
V
V
V
mA
mA
V
°C/
W
V/µs
½2.
Measurment using the gate trigger characteristics measurement circuit.
½3.
Case temperature is measured at the T
2
terminal 1.5mm away from the molded case.
½4.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
V
D
TIME
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c
=–0.4A/ms
3. Peak off-state voltage
V
D
=400V
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10
1
7
T
c
= 25°C
5
3
2
10
0
7
5
3
2
10
–1
1.0
RATED SURGE ON-STATE CURRENT
10
SURGE ON-STATE CURRENT (A)
9
8
7
6
5
4
3
2
1
0
10
0
2 3
5 7 10
1
2 3
5 7 10
2
ON-STATE CURRENT (A)
1.5
2.0
2.5
3.0
3.5
4.0
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
3
2
GATE VOLTAGE (V)
V
GT
10
0
7
5
3
2
10
–1
7
5
3
P
G(AV)
=
0.1W
I
GM
=
0.5A
I
RGT I
I
RGT III
V
GD
= 0.1V
3 5 7 10
1
2 3
5 7 10
2
2 3
5 710
3
GATE CURRENT (mA)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
1
7
5
3
2
V
GM
= 6V
P
GM
= 1W
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
3
7
5
3
2
10
2
7
5
3
2
10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3 5 710
5
3
2
JUNCTION TO AMBIENT
10
2
7
5
3
2
10
1
7
5
3
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TO CASE
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0.8
1.0
1.2
1.4
140
120
100
80
60
40
20
0
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
NATURAL CONVECTION
NO FINS
120
100
80
60
40
20
0
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
LACHING CURRENT (mA)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
DISTRIBUTION
+
T
2
, G
–
TYPICAL EXAMPLE
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
100 (%)
–
T
2
, G
–
TYPICAL EXAMPLE
10
–1
–40
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
140
TYPICAL EXAMPLE
T
j
= 125°C
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
120
100
80
60
40
III QUADRANT
20
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
I QUADRANT
Mar. 2002
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