Rectifier Diode, 1 Phase, 1 Element, 1780A, 400V V(RRM), Silicon, DO-200AB,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier ( Infineon ) |
| package instruction | O-CEDB-N2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| application | GENERAL PURPOSE |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.48 V |
| JEDEC-95 code | DO-200AB |
| JESD-30 code | O-CEDB-N2 |
| Maximum non-repetitive peak forward current | 19500 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Maximum output current | 1780 A |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 400 V |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| R38B4B | R38B6B | R38B10A | R38B8A | |
|---|---|---|---|---|
| Description | Rectifier Diode, 1 Phase, 1 Element, 1780A, 400V V(RRM), Silicon, DO-200AB, | Rectifier Diode, 1 Phase, 1 Element, 1780A, 600V V(RRM), Silicon, DO-200AB, | Rectifier Diode, 1 Phase, 1 Element, 1780A, 1000V V(RRM), Silicon, DO-200AB, | Rectifier Diode, 1 Phase, 1 Element, 1780A, 800V V(RRM), Silicon, DO-200AB, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| package instruction | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.48 V | 1.48 V | 1.48 V | 1.48 V |
| JEDEC-95 code | DO-200AB | DO-200AB | DO-200AB | DO-200AB |
| JESD-30 code | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 | O-CEDB-N2 |
| Maximum non-repetitive peak forward current | 19500 A | 19500 A | 19500 A | 19500 A |
| Number of components | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C |
| Maximum output current | 1780 A | 1780 A | 1780 A | 1780 A |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 400 V | 600 V | 1000 V | 800 V |
| surface mount | YES | YES | YES | YES |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | END | END | END | END |
| Maker | International Rectifier ( Infineon ) | - | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |