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SB3200HFAMP

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size276KB,4 Pages
ManufacturerFagor Electrónica
Download Datasheet Parametric View All

SB3200HFAMP Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

SB3200HFAMP Parametric

Parameter NameAttribute value
package instructionDO-27, 2 PIN
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current100 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
SB320 - SB3200
3.0 Amp. Schottky Barrier Rectifier
Voltage
20 V to 200 V
Current
3.0 A
DO-201AD (DO-27)
FEATURES
• Low power losses, high efficiency
• High surge current capability
• High frequency operation
• Guarding for overvoltage protection
• Low forward voltage drop
• Solder dip 260ºC, 10s
• Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
MECHANICAL DATA
• Case
:
DO-201AD (DO-27). Epoxy meets UL 94V-0
flammability rating.
• Polarity
:
Color band denotes cathode end.
• Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test
TYPICAL APPLICATIONS
Used in low voltage high frequency inverters, freewheeling,
dc-to-dc converters, and polarity protection applications.
Maximum Ratings and Electrical Characteristics at 25 ºC
SB320 SB340 SB350 SB360 SB390 SB3100 SB3150 SB3200
Marking Code
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
j
T
j
T
stg
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
(See graphic)
8.3 ms.Peak Forward Surge Current
(Jedec Method)
SB320 SB340 SB350 SB360 SB390 SB3100 SB3150 SB3200
20
14
20
40
28
40
50
35
50
60
42
60
3.0 A
80 A
90
63
90
100
70
100
150
105
150
200
140
200
Typical Junction Capacitance
Storage Temperature Range
(Note 2)
200 pF
-65 to +125 °C
130 pF
-65 to +150 °C
90 pF
-65 to +150 °C
Operating Temperature Range
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
th (j-a)
R
th (j-c)
Maximum Instantaneous Forward Voltage
(Note 1)
I
F
= 3.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance
Tj = 25 °C
Tj =125°C
(Note 2)
(Note 3)
0.55 V
0.5 mA
10 mA
0.70 V
5 mA
50 °C/W
15 °C/W
0.85 V
0.1 mA
2.0 mA
0.95 V
Notes: 1. Pulse Test: 300µ Pulse Width, 1% Duty Cycle
2. Thermal Resistance from Junction to Case per diode
3. Pulse test: Pulse width
£
40ms
www.fagorelectronica.com
Document Name: sb3
Version: May-12
Page Number: 1/4

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