PH28F128L18T85 datasheet, PDF - EEWORLD Datasheet

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PH28F128L18T85: DescriptionFlash, 8MX16, 90ns, PBGA56; Categorystorage storage; File Size2MB，106 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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PH28F128L18T85 Overview

Flash, 8MX16, 90ns, PBGA56

PH28F128L18T85 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FBGA, BGA56,7X8,30
Reach Compliance Code	compli
Maximum access time	90 ns
startup block	TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	NO
JESD-30 code	R-PBGA-B56
memory density	134217728 bi
Memory IC Type	FLASH
memory width	16
Number of departments/size	4,127
Number of terminals	56
word count	8388608 words
character code	8000000
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA56,7X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
page size	4 words
Parallel/Serial	PARALLEL
power supply	1.8 V
Certification status	Not Qualified
Department size	16K,64K
Maximum standby current	0.00007 A
Maximum slew rate	0.05 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
switch bit	NO
type	NOR TYPE
Base Number Matches	1

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Numonyx™ StrataFlash Wireless Memory

(L18)

28F128L18, 28F256L18

Datasheet

Product Features

High performance Read-While-Write/Erase

— 85 ns initial access

— 54 MHz with zero wait state, 14 ns clock-to-

data output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst

mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming

(BEFP) at 5 µs/byte (Typ)

— 1.8 V low-power buffered programming at

7 µs/byte (Typ)

Architecture

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 128-Mbit devices

— Multiple 16-Mbit partitions: 256-Mbit

devices

— Four 16-Kword parameter blocks: top or

bottom configurations

— 64-Kword main blocks

— Dual-operation: Read-While-Write (RWW)

or Read-While-Erase (RWE)

— Status Register for partition and device status

Power

— V

(core) = 1.7 V - 2.0 V

— V

CCQ

(I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V

— Standby current: 30 µA (Typ) for 256-Mbit

— 4-Word synchronous read current: 15 mA

(Typ) at 54 MHz

— Automatic Power Savings mode

Security

— OTP space: 64 unique factory device

identifier bits; 64 user-programmable OTP

bits; Additional 2048 user-programmable

OTP bits

— Absolute write protection: V

= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

Software

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Numonyx

Flash Data Integrator optimized

— Basic Command Set (BCS) and Extended

Command Set (ECS) compatible

— Common Flash Interface (CFI) capable

Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

— Intel ETOX* VIII process technology (0.13

µm)

Density and Packaging

— 128- and 256-Mbit density in VF BGA

packages

— 128/0 and 256/0 density in SCSP

— 16-bit wide data bus

Order Number: 251902-12

November 2007

INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR

OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND

CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED

WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A

PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx

products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications.

Legal L ines and D isc laim er s

Numonyx B.V. may make changes to specifications and product descriptions at any time, without notice.

Numonyx B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented

subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or

otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.

Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for

future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.

Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.

Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting

Numonyx's website at

http://www.numonyx.com.

Numonyx, the Numonyx logo, and StrataFlash are trademarks or registered trademarks of Numonyx B.V. or its subsidiaries in other countries.

*Other names and brands may be claimed as the property of others.

Datasheet

November 2007

251902-12

Numonyx™ StrataFlash

Wireless Memory (L18)

Contents

1.0

Introduction

.............................................................................................................. 8

1.1

Nomenclature ..................................................................................................... 8

1.2

Acronyms........................................................................................................... 9

1.3

Conventions ....................................................................................................... 9

Functional Overview

................................................................................................ 10

Package Information

............................................................................................... 11

3.1

VF BGA Packages .............................................................................................. 11

3.2

SCSP Packages ................................................................................................. 13

Ballout and Signal Descriptions

............................................................................... 15

4.1

Signal Ballout ................................................................................................... 15

4.1.1 VF BGA Package Ballout .......................................................................... 15

4.1.2 SCSP Package Ballout ............................................................................. 17

4.2

Signal Descriptions ............................................................................................ 18

4.2.1 VF BGA Package Signal Descriptions ......................................................... 18

4.2.2 128/0 and 256/0 SCSP Package Signal Descriptions .................................... 19

4.3

Memory Map..................................................................................................... 20

Maximum Ratings and Operating Conditions............................................................

5.1

Absolute Maximum Ratings................................................................................. 23

5.2

Operating Conditions ......................................................................................... 23

Electrical Specifications

........................................................................................... 24

6.1

DC Current Characteristics.................................................................................. 24

6.2

DC Voltage Characteristics.................................................................................. 25

AC Characteristics

................................................................................................... 26

7.1

AC Test Conditions ............................................................................................ 26

7.2

Capacitance...................................................................................................... 27

7.3

AC Read Specifications (VCCQ = 1.35 V – 2.0 V) ................................................... 27

7.4

AC Read Specifications 128-Mbit (VCCQ = 1.7–2.0 V) ............................................ 28

7.5

AC Read Specifications 256-Mbit (VCCQ = 1.7–2.0 V) ............................................ 30

7.6

AC Write Specifications ...................................................................................... 35

7.7

Program and Erase Characteristics....................................................................... 38

Power and Reset Specifications

............................................................................... 40

8.1

Power Up and Down .......................................................................................... 40

8.2

Reset............................................................................................................... 40

8.3

Power Supply Decoupling ................................................................................... 41

8.4

Automatic Power Saving..................................................................................... 41

Device Operations

................................................................................................... 42

9.1

Bus Operations ................................................................................................. 42

9.1.1 Reads ................................................................................................... 42

9.1.2 Writes................................................................................................... 43

9.1.3 Output Disable ....................................................................................... 43

9.1.4 Standby ................................................................................................ 43

9.1.5 Reset.................................................................................................... 43

9.2

Device Commands............................................................................................. 44

9.3

Command Definitions......................................................................................... 45

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0 Read Operations

...................................................................................................... 48

10.1 Asynchronous Page-Mode Read ........................................................................... 48

10.2 Synchronous Burst-Mode Read............................................................................ 48

November 2007

251902-12

Datasheet

Numonyx™ StrataFlash

Wireless Memory (L18)

10.3

10.2.1 Burst Suspend........................................................................................49

Read Configuration Register (RCR) .......................................................................49

10.3.1 Read Mode.............................................................................................50

10.3.2 Latency Count ........................................................................................50

10.3.3 WAIT Polarity .........................................................................................52

10.3.3.1 WAIT Signal Function.................................................................52

10.3.4 Data Hold ..............................................................................................53

10.3.5 WAIT Delay............................................................................................54

10.3.6 Burst Sequence ......................................................................................54

10.3.7 Clock Edge.............................................................................................55

10.3.8 Burst Wrap ............................................................................................55

10.3.9 Burst Length ..........................................................................................55

11.0 Programming Operations

.........................................................................................56

11.1 Word Programming ............................................................................................56

11.1.1 Factory Word Programming......................................................................57

11.2 Buffered Programming .......................................................................................57

11.3 Buffered Enhanced Factory Programming ..............................................................58

11.3.1 Buffered EFP Requirements and Considerations...........................................58

11.3.2 Buffered EFP Setup Phase ........................................................................59

11.3.3 Buffered EFP Program/Verify Phase ...........................................................59

11.3.4 Buffered EFP Exit Phase ...........................................................................60

11.4 Program Suspend ..............................................................................................60

11.5 Program Resume ...............................................................................................60

11.6 Program Protection ............................................................................................61

12.0 Erase Operations......................................................................................................62

12.1 Block Erase .......................................................................................................62

12.2 Erase Suspend ..................................................................................................62

12.3 Erase Resume ...................................................................................................63

12.4 Erase Protection ................................................................................................63

13.0 Security Modes

........................................................................................................64

13.1 Block Locking ....................................................................................................64

13.1.1 Lock Block .............................................................................................64

13.1.2 Unlock Block ..........................................................................................64

13.1.3 Lock-Down Block ....................................................................................64

13.1.4 Block Lock Status ...................................................................................65

13.1.5 Block Locking During Suspend ..................................................................65

13.2 Protection Registers ...........................................................................................66

13.2.1 Reading the Protection Registers...............................................................67

13.2.2 Programming the Protection Registers .......................................................68

13.2.3 Locking the Protection Registers ...............................................................68

14.0 Dual-Operation Considerations

................................................................................69

14.1 Memory Partitioning ...........................................................................................69

14.2 Read-While-Write Command Sequences................................................................69

14.2.1 Simultaneous Operation Details ................................................................70

14.2.2 Synchronous and Asynchronous RWW Characteristics and Waveforms ...........70

14.2.2.1 Write operation to asynchronous read transition ............................70

14.2.2.2 Write to synchronous read operation transition..............................70

14.2.2.3 Write Operation with Clock Active ................................................71

14.2.3 Read Operation During Buffered Programming ............................................71

14.3 Simultaneous Operation Restrictions ....................................................................72

15.0 Special Read States..................................................................................................73

15.1 Read Status Register..........................................................................................73

Datasheet

November 2007

251902-12

PH28F128L18T85 Related Products

	PH28F128L18T85	GE28F256L18B85	GE28F256L18T85	GE28F128L18T85
Description	Flash, 8MX16, 90ns, PBGA56	Flash, 16MX16, 90ns, PBGA79,	Flash, 16MX16, 85ns, PBGA79,	Flash, 8MX16, 90ns, PBGA56
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible
Reach Compliance Code	compli	unknow	unknow	unknown
Maximum access time	90 ns	90 ns	85 ns	90 ns
startup block	TOP	BOTTOM	TOP	TOP
command user interface	YES	YES	YES	YES
Universal Flash Interface	YES	YES	YES	YES
Data polling	NO	NO	NO	NO
JESD-30 code	R-PBGA-B56	R-PBGA-B79	R-PBGA-B79	R-PBGA-B56
memory density	134217728 bi	268435456 bi	268435456 bi	134217728 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH
memory width	16	16	16	16
Number of departments/size	4,127	4,255	4,255	4,127
Number of terminals	56	79	79	56
word count	8388608 words	16777216 words	16777216 words	8388608 words
character code	8000000	16000000	16000000	8000000
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-25 °C	-25 °C	-25 °C	-25 °C
organize	8MX16	16MX16	16MX16	8MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	FBGA	FBGA	FBGA
Encapsulate equivalent code	BGA56,7X8,30	BGA79,7X13,30	BGA79,7X13,30	BGA56,7X8,30
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
page size	4 words	4 words	4 words	4 words
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Department size	16K,64K	16K,64K	16K,64K	16K,64K
Maximum standby current	0.00007 A	0.00011 A	0.00011 A	0.00007 A
Maximum slew rate	0.05 mA	0.05 mA	0.027 mA	0.05 mA
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
switch bit	NO	NO	NO	NO
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
Base Number Matches	1	1	1	-

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