GT28F128W18T85 datasheet, PDF - EEWORLD Datasheet

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GT28F128W18T85: DescriptionFlash, 8MX16, 85ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56; Categorystorage storage; File Size598KB，86 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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GT28F128W18T85 Overview

Flash, 8MX16, 85ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56

GT28F128W18T85 Parametric

Parameter Name	Attribute value
Parts packaging code	BGA
package instruction	0.75 MM PITCH, CSP, MICRO, BGA-56
Contacts	56
Reach Compliance Code	unknow
ECCN code	3A991.B.1.A
Maximum access time	85 ns
Other features	ALSO SUPPORTS SYNCHRONOUS OPERATION
startup block	TOP
JESD-30 code	R-PBGA-B56
length	9 mm
memory density	134217728 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	56
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
type	NOR TYPE
width	7.7 mm
Base Number Matches	1

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1.8 Volt Intel

Wireless Flash Memory

(W18)

28F320W18, 28F640W18, 28F128W18

Preliminary Datasheet

Product Features

High Performance

— 70 ns Initial Access Speed

— 14 ns Clock to Data Output Zero Wait-State

Synchronous Burst Mode

— 20 ns Page Mode Read Speed

— 4-, 8-, and Continuous Word Burst Modes

— Burst and Page Modes in Both Parameter and

Main Partitions

— Programmable WAIT Configuration

— Enhanced Factory Programming Mode:

3.50 µs/Word (Typ)

— Glueless 12 V interface for Fast Factory

Programming @ 8 µs/Word (Typ)

— 1.8 V Low-Power Programming @ 12 µs/Word

(Typ)

— Program or Erase during Reads

Architecture

— Multiple 4-Mbit Partitions

— Dual-Operation: RWW or RWE (Read-While -

Write or Read-While-Erase)

— Eight, 4-Kword Parameter Code/Data Blocks

— 32-Kword Main Code/Data Blocks

— Top and Bottom Parameter Configurations

Power Operation

— 1.65 V to 1.95 V Read and Write Operations

— 1.7 V to 2.24 V V

CCQ

for I/O Isolation

— Standby Current: 5 µA (Typ)

— 40/52/66 MHz 4-word Sync Read

Current: 7 mA (Typ)

Software

— 5 µs (Typ) Program Suspend

— 5 µs (Typ) Erase Suspend

— Intel

Flash Data Integrator (IFDI) Software

Optimized

— Intel Basic Command Set Compatible

— Common Flash Interface (CFI)

Quality and Reliability

— Extended Temperature –40 °C to +85 °C

— Minimum 100K Block Erase Cycles

— ETOX™ VII Flash Technology (0.18 µm)

Security

— Two 64-bit Protection Registers: 64 Unique

Device Identifier Bits; 64 User-Programmable

OTP Bits

— Absolute Write Protection

⇒V

= GND

— Erase/Program Lockout during Power

Transitions

— Individual Dynamic Zero-Latency Block

Locking

Density and Packaging

— 32-Mbit in a VF BGA Package

— 64-Mbit and 128-Mbit in

µBGA*Package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

µBGA*

and VF BGA Packages

— 16-Bit Wide Data Bus

The 1.8 Volt Intel

Wireless Flash memory with flexible multi-partition dual-operation provides high-

performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs.

Combining high read performance with flash memory’s intrinsic non-volatility, 1.8 Volt Intel

Wireless Flash

memory eliminates the traditional system-performance paradigm of shadowing redundant code memory from

slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases

reliability and reduces overall system power consumption and cost.

The 1.8 Volt Intel

Wireless Flash memory’s flexible multi-partition architecture allows programming or erasing

to occur in one partition while reading from another partition. This allows for higher data write throughput

compared to single partition architectures. The dual-operation architecture also allows two processors to

interleave code operations while program and erase operations take place in the background. The designer can

also choose the size of the code and data partitions via the flexible multi-partition architecture.

The 1.8 Volt Intel

Wireless Flash memory is manufactured on Intel

0.18 µm ETOX™ VII process technology.

It is available in µBGA and VF BGA packages, which are ideal for board-constrained applications.

Notice:

This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

Order Number:

290701-002

January 2001

1.8 Volt Intel

Wireless Flash Memory (W18)

Contents

1.0

Introduction

.................................................................................................................. 1

1.1

1.2

Document Conventions ......................................................................................... 1

Product Overview .................................................................................................. 1

Package and Pinouts ............................................................................................ 2

Ball Descriptions.................................................................................................... 3

Memory Partitioning .............................................................................................. 5

2.3.1 Main Blocks .............................................................................................. 7

2.3.2 Parameter Blocks ..................................................................................... 8

Bus Operations...................................................................................................... 8

3.1.1 Read......................................................................................................... 8

3.1.2 Standby .................................................................................................... 9

3.1.3 Write ......................................................................................................... 9

3.1.4 Reset ........................................................................................................9

Read Array Command.........................................................................................13

Read Identifier Command ...................................................................................13

Read Query Command .......................................................................................14

Read Status Register Command.........................................................................14

Clear Status Register Command.........................................................................16

Word Program Command ...................................................................................16

Enhanced Factory Program Command (EFP) ....................................................16

4.7.1 EFP Requirements .................................................................................17

4.7.2 Setup Phase...........................................................................................17

4.7.3 Program Phase ......................................................................................17

4.7.4 Verify Phase ...........................................................................................17

4.7.5 Exit Phase ..............................................................................................18

Program Suspend/Resume - Erase Suspend/Resume Command .....................18

Block Erase Command........................................................................................19

Security Modes....................................................................................................19

Block Locking Command.....................................................................................20

4.11.1 Lock Block ..............................................................................................21

4.11.2 Unlock Block...........................................................................................21

4.11.3 Lock-Down Block....................................................................................21

Block Lock Status................................................................................................21

Locking Operations during Erase Suspend.........................................................22

Status Register Error Checking...........................................................................22

WP# Lock-Down Control .....................................................................................22

Protection Registers ............................................................................................22

Read Protection Register ....................................................................................23

Program Protection Register ...............................................................................23

Lock Protection Register .....................................................................................24

2.0

Product Description

.................................................................................................. 2

2.1

2.2

2.3

3.0

Principles of Operation

............................................................................................ 8

3.1

4.0

Command Definitions

.............................................................................................10

4.1

4.2

4.3

4.4

4.5

4.6

4.7

4.8

4.9

4.10

4.11

4.12

4.13

4.14

4.15

4.16

4.17

4.18

4.19

Preliminary

iii

1.8 Volt Intel

Wireless Flash Memory (W18)

5.0

Set Configuration Register

................................................................................... 26

5.0.1 Read Mode............................................................................................. 26

5.0.2 First Access Latency Count ................................................................... 26

5.0.3 WAIT Signal Function ............................................................................ 28

5.0.4 WAIT Signal Polarity .............................................................................. 29

5.0.5 Data Output Configuration ..................................................................... 29

5.0.6 WAIT Delay Configuration...................................................................... 30

5.0.7 Burst Sequence Configuration ............................................................... 31

5.0.8 Clock Configuration................................................................................ 32

5.0.9 Burst Wrap ............................................................................................. 32

5.0.10 Burst Length ........................................................................................... 33

Read-While-Write/Erase ..................................................................................... 33

Factory Program Mode ....................................................................................... 41

Programming Voltage Protection (VPP).............................................................. 41

Active Power ....................................................................................................... 42

Automatic Power Savings ................................................................................... 42

Standby Power.................................................................................................... 42

Power-Up/Down Operation ................................................................................. 42

7.4.1 System Reset and RST#........................................................................ 42

7.4.2 VCC, VPP, and RST# Transitions.......................................................... 43

7.4.3 Power Supply Decoupling ...................................................................... 43

Absolute Maximum Ratings ................................................................................ 44

Extended Temperature Operation....................................................................... 45

Capacitance ........................................................................................................ 45

DC Characteristics .............................................................................................. 46

AC I/O Test Conditions ....................................................................................... 48

AC Read Characteristics..................................................................................... 49

AC Write Characteristics ..................................................................................... 60

Erase and Program Times .................................................................................. 62

Reset Specifications............................................................................................ 62

5.1

6.0

Program and Erase Voltages

.............................................................................. 41

6.1

6.2

7.0

Power Consumption

............................................................................................... 42

7.1

7.2

7.3

7.4

8.0

Electrical Specifications

........................................................................................ 44

8.1

8.2

8.3

8.4

8.5

8.6

8.7

8.8

8.9

Appendix A

Appendix B

Appendix C

Appendix D

Appendix E

Write State Machine States

............................................................................. 64

Protection Register Addressing

................................................................... 67

Common Flash Interface

................................................................................. 68

Mechanical Specifications

.............................................................................. 78

Ordering Information

......................................................................................... 79

Preliminary

GT28F128W18T85 Related Products

	GT28F128W18T85	GT28F128W18B85	GT28F128W18T70	GT28F128W18B70
Description	Flash, 8MX16, 85ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56	Flash, 8MX16, 85ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56	Flash, 8MX16, 70ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56	Flash, 8MX16, 70ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	0.75 MM PITCH, CSP, MICRO, BGA-56	0.75 MM PITCH, CSP, MICRO, BGA-56	0.75 MM PITCH, CSP, MICRO, BGA-56	VFBGA,
Contacts	56	56	56	56
Reach Compliance Code	unknow	unknow	unknown	unknown
ECCN code	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
Maximum access time	85 ns	85 ns	70 ns	70 ns
Other features	ALSO SUPPORTS SYNCHRONOUS OPERATION	ALSO SUPPORTS SYNCHRONOUS OPERATION	ALSO SUPPORTS SYNCHRONOUS OPERATION	ALSO SUPPORTS SYNCHRONOUS OPERATION
startup block	TOP	BOTTOM	TOP	BOTTOM
JESD-30 code	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56
length	9 mm	9 mm	9 mm	9 mm
memory density	134217728 bi	134217728 bi	134217728 bit	134217728 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of terminals	56	56	56	56
word count	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	8MX16	8MX16	8MX16	8MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA	VFBGA	VFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	1 mm	1 mm	1 mm
Maximum supply voltage (Vsup)	1.95 V	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	7.7 mm	7.7 mm	7.7 mm	7.7 mm
Base Number Matches	1	1	1	1

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