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PH28F256L18B85

Description
Flash, 16MX16, 85ns, PBGA79, 0.75 MM PITCH, LEAD FREE, VFBGA-79
Categorystorage    storage   
File Size1MB,106 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

PH28F256L18B85 Overview

Flash, 16MX16, 85ns, PBGA79, 0.75 MM PITCH, LEAD FREE, VFBGA-79

PH28F256L18B85 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeBGA
package instruction0.75 MM PITCH, LEAD FREE, VFBGA-79
Contacts79
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time85 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B79
JESD-609 codee1
length11 mm
memory density268435456 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size4,255
Number of terminals79
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA79,7X13,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size16K,64K
Maximum standby current0.00011 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
switch bitNO
typeNOR TYPE
width9 mm
Base Number Matches1
Intel StrataFlash® Wireless Memory
(L18)
28F640L18, 28F128L18, 28F256L18
Datasheet
Product Features
High performance Read-While-Write/Erase
— 85 ns initial access
— 54 MHz with zero wait state, 14 ns clock-to-
data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— 1.8 V low-power buffered programming at
7 µs/byte (Typ)
Architecture
— Asymmetrically-blocked architecture
— Multiple 8-Mbit partitions: 64-Mbit and 128-
Mbit devices
— Multiple 16-Mbit partitions: 256-Mbit devices
— Four 16-Kword parameter blocks: top or
bottom configurations
— 64-Kword main blocks
— Dual-operation: Read-While-Write (RWW) or
Read-While-Erase (RWE)
— Status Register for partition and device status
Power
— V
CC
(core) = 1.7 V - 2.0 V
— V
CCQ
(I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
— Standby current: 30 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 15 mA (Typ)
at 54 MHz
— Automatic Power Savings mode
Security
— OTP space:
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
— Absolute write protection: V
PP
= GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Intel® Flash Data Integrator optimized
— Basic Command Set (BCS) and Extended
Command Set (ECS) compatible
— Common Flash Interface (CFI) capable
Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (0.13 µm)
Density and Packaging
— 64-, 128-, and 256-Mbit density in VF BGA
packages
— 128/0 and 256/0 density in SCSP
— 16-bit wide data bus
The Intel StrataFlash
®
wireless memory (L18) device is the latest generation of Intel
StrataFlash
®
memory devices featuring flexible, multiple-partition, dual operation. It provides
high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low-
voltage, multi-level cell (MLC) technology.
The multiple-partition architecture enables background programming or erasing to occur in one
partition while code execution or data reads take place in another partition. This dual-operation
architecture also allows a system to interleave code operations while program and erase
operations take place in the background. The 8-Mbit or 16-Mbit partitions allow system
designers to choose the size of the code and data segments. The L18 wireless memory device is
manufactured using Intel 0.13 µm ETOX™ VIII process technology. It is available in industry-
standard chip scale packaging.
Order Number: 251902, Revision: 010
August 2005
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