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IXGD20N60A-43

Description
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2
CategoryDiscrete semiconductor    The transistor   
File Size210KB,1 Pages
ManufacturerIXYS
Environmental Compliance
Download Datasheet Parametric View All

IXGD20N60A-43 Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2

IXGD20N60A-43 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDIE
package instructionDIE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH SPEED
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
JESD-30 codeR-XUUC-N2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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