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PH28F640L18B95

Description
Flash, 4MX16, 95ns, PBGA56
Categorystorage    storage   
File Size1MB,106 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Environmental Compliance
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PH28F640L18B95 Overview

Flash, 4MX16, 95ns, PBGA56

PH28F640L18B95 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFBGA, BGA56,7X8,30
Reach Compliance Codeunknow
Maximum access time95 ns
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B56
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Number of departments/size4,63
Number of terminals56
word count4194304 words
character code4000000
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA56,7X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
power supply1.8 V
Certification statusNot Qualified
Department size16K,64K
Maximum standby current0.000005 A
Maximum slew rate0.05 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
switch bitNO
typeNOR TYPE
Base Number Matches1
Intel StrataFlash Wireless Memory
(L18)
28F640L18, 28F128L18, 28F256L18
®
Datasheet
Product Features
High performance Read-While-Write/Erase
Software
— 85 ns initial access
— 54 MHz with zero wait state, 14 ns clock-to-
data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming
(Buffered EFP): 5 µs/byte (Typ)
— 1.8 V low-power buffered and non-buffered
programming at 7 µs/byte (Typ)
Architecture
— Asymmetrically-blocked architecture
— Multiple 8-Mbit partitions: 64Mb and 128Mb
devices
— Multiple 16-Mbit partitions: 256Mb devices
— Four 16-Kword parameter blocks: top or
bottom configurations
— 64-Kword main blocks
— Dual-operation: Read-While-Write (RWW) or
Read-While-Erase (RWE)
— Status register for partition and device status
Power
— 1.7 V - 2.0 V V
CC
operation
— I/O voltage: 1.35 V - 2.0 V, 1.7 V - 2.0 V
— Standby current: 25 µA (Typ)
— 4-Word synchronous read current: 17 mA (Typ)
at 54 MHz
— Automatic Power Savings (APS) mode
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Intel® Flash Data Integrator optimized
— Basic Command Set (BCS) and Extended
Command Set (ECS) compatible
— Common Flash Interface (CFI) capable
Security
OTP space:
— 64 unique device identifier bits
— 64 user-programmable OTP bits
— Additional 2048 user-programmable OTP
bits
— Absolute write protection: V
PP
= GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (0.13 µm)
Density and Packaging
— 64-, 128- and 256-Mbit density in VF BGA
packages
— 128/0, and 256/0 Density in SCSP
— 16-bit wide data bus
The Intel StrataFlash
®
wireless memory (L18) device is the latest generation of Intel
StrataFlash
®
memory devices featuring flexible, multiple-partition, dual operation. It provides
high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low-
voltage, multi-level cell (MLC) technology.
The multiple-partition architecture enables background programming or erasing to occur in one
partition while code execution or data reads take place in another partition. This dual-operation
architecture also allows two processors to interleave code operations while program and erase
operations take place in the background. The 8-Mbit partitions allow system designers to choose
the size of the code and data segments. The L18 wireless memory device is manufactured using
Intel 0.13 µm ETOX™ VIII process technology. It is available in industry-standard chip scale
packaging.
Notice:
This document contains information on products in the design phase of development.
The information here is subject to change without notice. Verify with your local Intel sales office
that you have the latest datasheet before finalizing a design.
251902-007
September 2004

PH28F640L18B95 Related Products

PH28F640L18B95 PH28F128L18T95 PH28F256L18B95
Description Flash, 4MX16, 95ns, PBGA56 Flash, 8MX16, 95ns, PBGA56 Flash, 16MX16, 95ns, PBGA79
Is it Rohs certified? conform to conform to conform to
package instruction FBGA, BGA56,7X8,30 FBGA, BGA56,7X8,30 FBGA, BGA79,7X13,30
Reach Compliance Code unknow unknow unknow
Maximum access time 95 ns 95 ns 95 ns
startup block BOTTOM TOP BOTTOM
command user interface YES YES YES
Universal Flash Interface YES YES YES
Data polling NO NO NO
JESD-30 code R-PBGA-B56 R-PBGA-B56 R-PBGA-B79
memory density 67108864 bi 134217728 bi 268435456 bi
Memory IC Type FLASH FLASH FLASH
memory width 16 16 16
Number of departments/size 4,63 4,127 4,255
Number of terminals 56 56 79
word count 4194304 words 8388608 words 16777216 words
character code 4000000 8000000 16000000
Maximum operating temperature 85 °C 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C -25 °C
organize 4MX16 8MX16 16MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code FBGA FBGA FBGA
Encapsulate equivalent code BGA56,7X8,30 BGA56,7X8,30 BGA79,7X13,30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
page size 4 words 4 words 4 words
Parallel/Serial PARALLEL PARALLEL PARALLEL
power supply 1.8 V 1.8 V 1.8 V
Certification status Not Qualified Not Qualified Not Qualified
Department size 16K,64K 16K,64K 16K,64K
Maximum standby current 0.000005 A 0.000005 A 0.000005 A
Maximum slew rate 0.05 mA 0.05 mA 0.05 mA
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER
Terminal form BALL BALL BALL
Terminal pitch 0.75 mm 0.75 mm 0.75 mm
Terminal location BOTTOM BOTTOM BOTTOM
switch bit NO NO NO
type NOR TYPE NOR TYPE NOR TYPE
Maker - Intel Intel

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