2SA1980L datasheet, PDF - EEWORLD Datasheet

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2SA1980L: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size632KB，1 Pages; ManufacturerMicro Commercial Components (MCC)

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2SA1980L Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

2SA1980L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	300
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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MCC

Features

•

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SA1980

Low Collector Saturation Voltage: V

CE(sat)

=0.3V(Max.)

Low Output Capacitance: Cob=4.0pF(Typ.)

Complementary Pair With 2SC5343

Marking Code: A1980

PNP Silicon

Transistors

TO-92

A

E

Maximum Ratings

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

C

T

J

T

STG

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector power dissipation

Junction Temperature

Storage Temperature

Rating

50

5.0

150

625

150

-55 to +150

Unit

V

mA

mW

O

B

1 2

3

C

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

B

=0)

Collector-Emitter Breakdown Voltage

(I

C

=10mAdc, I

B

=0)

Emitter-Base Breakdown Voltage

(I

E

=10uAdc, I

C

=0)

Collector-Base Cutoff Current

(V

CB

=50Vdc,I

E

=0)

Emitter-Base Cutoff Current

(V

EB

=5.0Vdc, I

C

=0)

Min

50

5.0

---

Typ

---

Max

---

0.1

Units

Vdc

uAdc

PIN 1.

PIN 2.

PIN 3.

C

OFF CHARACTERISTICS

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

D

BASE

COLLECTOR

EMITTER

ON CHARACTERISTICS

70

Forward Current Transfer ratio*

(I

C

=2.0Adc, V

CE

=6.0Vdc)

V

CE(sat)

Collector-Emitter Saturation Voltage

---

(I

C

=100mAdc, I

B

=10mAdc)

f

T

Transition Frequency

80

(V

CE

=10Vdc, I

C

=1.0mAdc)

C

ob

Collector Output Capacitance

---

(V

CB

=10Vdc, I

E

=0, f=1.0MHz)

NF

Noise Figure

(V

CE

=6.0Vdc, I

C

=0.1mAdc,

---

f=1.0KHz, Rg=10KΩ)

* h

FE

rank / O: 70-140, Y:120-240, G:200-400, L:300-700

h

FE

---

4.0

700

0.3

---

7.0

---

Vdc

DIMENSIONS

G

MHz

pF

DIM

A

B

C

D

E

G

MIN

.175

.500

.016

.135

.095

INCHES

MAX

.185

---

.020

.145

.105

MIN

4.45

4.46

12.7

0.41

3.43

2.42

MM

MAX

4.70

---

0.63

3.68

2.67

NOTE

---

10

dB

www.mccsemi.com

Revision: 1

2003/05/23

2SA1980L Related Products

	2SA1980L	2SA1980G	2SA1980O	2SA1980Y	2SA1980
Description	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	300	200	70	120	70
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz
Base Number Matches	1	1	1	1	1

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