2SA1981
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-0.8 A, -35 V
PNP Plastic Encapsulated Transistor
FEATURES
TO-92
High DC Current Gain
Complementary Pair with 2SC5344
G
H
CLASSIFICATION OF h
FE
Product-Rank
2SA1981-O 2SA1981-Y
Range
100~200
160~320
K
J
A
B
D
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-35
-30
-5
-0.8
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min
-35
-30
-5
-
-
100
-
-
-
Typ
-
-
-
-
-
-
-
120
19
Max
-
-
-
-0.1
-0.1
320
-0.5
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test condition
I
C
= -0.5mA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -0.05mA, I
C
=0
V
CB
= -35V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -0.1A
I
C
= -0.5A, I
B
= -20mA
V
CE
= -5V, I
C
= -10mA
V
CB
= -10V, I
E
= 0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
Page 1 of 1
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