933776090185 datasheet, PDF - EEWORLD Datasheet

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933776090185: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size199KB，9 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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933776090185 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

933776090185 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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PMBTA42

300 V, 100 mA NPN high-voltage transistor

Rev. 05 — 12 December 2008

Product data sheet

1. Product profile

1.1 General description

NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted

Device (SMD) plastic package.

PNP complement: PMBTA92.

1.2 Features

High voltage (max. 300 V)

1.3 Applications

Telephony and professional communication equipment

1.4 Quick reference data

Table 1.

Symbol

CEO

Quick reference data

Parameter

collector-emitter voltage

collector current

DC current gain

= 10 V

= 1 mA

= 10 mA

= 30 mA

Conditions

open base

Min

Typ

Max

300

100

Unit

2. Pinning information

Table 2.

Pinning

Description

base

emitter

collector

sym021

Simplified outline

Graphic symbol

933776090185 Related Products

	933776090185	933776090235	PMBTA42	933776090215
Description	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Nexperia	Nexperia	Nexperia	Nexperia
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	300 V	300 V	300 V	300 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	40	40
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz

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