PMBTA42
300 V, 100 mA NPN high-voltage transistor
Rev. 05 — 12 December 2008
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.
PNP complement: PMBTA92.
1.2 Features
High voltage (max. 300 V)
1.3 Applications
Telephony and professional communication equipment
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 10 V
I
C
= 1 mA
I
C
= 10 mA
I
C
= 30 mA
25
40
40
-
-
-
-
-
-
Conditions
open base
Min
-
-
Typ
-
-
Max
300
100
Unit
V
mA
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
2
sym021
Simplified outline
3
Graphic symbol
3
1
NXP Semiconductors
PMBTA42
300 V, 100 mA NPN high-voltage transistor
3. Ordering information
Table 3.
Ordering information
Package
Name
PMBTA42
PMBTA42/DG
[1]
/DG: halogen-free
Type number
[1]
Description
plastic surface-mounted package; 3 leads
Version
SOT23
-
4. Marking
Table 4.
PMBTA42
PMBTA42/DG
[1]
[2]
/DG: halogen-free
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[2]
*1D
*BV
Type number
[1]
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
−65
−65
Max
300
300
6
100
200
100
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PMBTA42_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 12 December 2008
2 of 9
NXP Semiconductors
PMBTA42
300 V, 100 mA NPN high-voltage transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= 200 V; I
E
= 0 A
V
EB
= 6 V; I
C
= 0 A
V
CE
= 10 V
I
C
= 1 mA
I
C
= 10 mA
I
C
= 30 mA
V
CEsat
V
BEsat
C
re
f
T
collector-emitter
saturation voltage
I
C
= 20 mA; I
B
= 2 mA
25
40
40
-
-
-
50
-
-
-
-
-
-
-
-
-
-
500
900
3
-
mV
mV
pF
MHz
Min
-
-
Typ
-
-
Max
100
100
Unit
nA
nA
base-emitter saturation I
C
= 20 mA; I
B
= 2 mA
voltage
feedback capacitance
transition frequency
V
CB
= 20 V; I
C
= i
c
= 0 A;
f = 1 MHz
V
CE
= 20 V; I
C
= 10 mA;
f = 100 MHz
PMBTA42_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 12 December 2008
3 of 9
NXP Semiconductors
PMBTA42
300 V, 100 mA NPN high-voltage transistor
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 1.
PMBTA42_5
Package outline SOT23 (TO-236AB)
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 12 December 2008
4 of 9
NXP Semiconductors
PMBTA42
300 V, 100 mA NPN high-voltage transistor
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PMBTA42
PMBTA42/DG
[1]
[2]
For further information and the availability of packing methods, see
Section 13.
/DG: halogen-free
Package Description
SOT23
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
-215
10000
-235
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
1.7
2
solder paste
0.6
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
0.7
(3×)
Fig 2.
Reflow soldering footprint SOT23 (TO-236AB)
PMBTA42_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 12 December 2008
5 of 9
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