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PZT13003

Description
1.5A , 700V NPN Silicon Medium Power Transistor
File Size423KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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PZT13003 Overview

1.5A , 700V NPN Silicon Medium Power Transistor

PZT13003
Elektronische Bauelemente
1.5A , 700V
NPN Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-223
A
M
4
For AF driver and output stages
Power switching applications
CLASSIFICATION OF h
FE
Product-Rank
Range
PZT13003-A
8~20
PZT13003-B
15~30
PZT13003-C
25~40
Top View
CB
1
2
3
K
E
L
D
PACKAGE INFORMATION
Package
SOT-223
MPQ
2.5K
Leader Size
13 inch
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
6.20
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.50
4.70
0.60
0.82
H
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
-
0.10
-
-
0.25
0.35
-
-
2.30 REF.
2.90
3.10
J
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J,
T
STG
Ratings
700
450
9
1.5
1.25
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter-Base Cutoff Current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
ON-Time
Storage time
Fall time
Transition frequency
1
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
T
(on)
t
S
t
f
f
T
Min.
700
450
9
Max.
Unit
V
V
V
Test Conditions
I
C
=1mA , I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=700V, I
E
=0
V
EB
=9V, I
C
=0
V
CE
=10V, I
C
=0.5A
I
C
=1A, I
B
=250mA
I
C
=1A, I
B
=250mA
V
CE
=10V, I
C
=2A
I
B1
=I
B2
=400mA
V
CE
=10V, I
C
=500mA, f=1.0MH
Z
0.1
0.05
8
40
1
1.2
1
4
0.7
4
mA
mA
V
V
μS
μS
μS
MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2012 Rev. A
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