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PZT2907A

Description
RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size166KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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PZT2907A Overview

RF POWER TRANSISTOR

PZT2907A Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeRF POWER
UNISONIC TECHNOLOGIES CO., LTD
PZT2907A
Preliminary
PNP SILICON TRANSISTOR
PNP GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
This UTC
PZT2907A
is designed for use as a general purpose
amplifier and switch requiring collector currents to 500 mA.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
PZT2907AL-AA3-R
PZT2907AG-AA3-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 4
QW-R207-023.c

PZT2907A Related Products

PZT2907A PZT2907AG-AA3-R PZT2907AL-AA3-R
Description RF POWER TRANSISTOR RF POWER TRANSISTOR RF POWER TRANSISTOR
Is it Rohs certified? - conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction - HALOGEN FREE PACKAGE-4 LEAD FREE PACKAGE-4
Contacts - 4 4
Reach Compliance Code - compliant compli
ECCN code - EAR99 EAR99
Maximum collector current (IC) - 0.8 A 0.8 A
Collector-emitter maximum voltage - 60 V 60 V
Configuration - SINGLE SINGLE
Minimum DC current gain (hFE) - 100 100
JESD-30 code - R-PDSO-G4 R-PDSO-G4
Number of components - 1 1
Number of terminals - 4 4
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - PNP PNP
Maximum power dissipation(Abs) - 1.3 W 1.3 W
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 200 MHz 200 MHz
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