PZT4672
Elektronische Bauelemente
RoHS Compliant Product
NPN Transistor
Epitaxial Planar
Transistor
SOT-223
Description
The PZT4672 is designed for low
frequency amplifier applications.
Features
*Excellent DC Current Gain Characteristic
*Low Saturation Voltage, Typically
V
CE
(sat)=0.1V at I
C
/I
B
=1A/50mA
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
4 6 7 2
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Ta=25
o
C
Parameter
Value
60
50
6
2
5
2
-55~+150
Units
V
V
V
A
W
O
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse PW=10ms)
Total Power Dissipation
Junction and Storage Temperature
o
I
C
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)
*h
FE
fT
C
ob
Min
60
50
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.1
-
210
25
Max
-
-
-
Unit
V
V
V
nA
nA
V
Test Conditions
I
C
= 50
µA,I
E
=0
I
C
= 1mA,I
B
=0
I
E
= 50µA,I
C
=0
V
CB
= 60V,I
E
=0
V
EB
=5V,I
C
=0
I
C
=1A,I
B
=50mA
V
CE
= 2 V, I
C
=500mA
V
CE
= 2 V, I
C
= 500 mA,f=100MHz
V
CB
=10V , f=1MHz,I
E
=0
*Pulse width
≦
380
µ
s, Duty Cycle
≦
2%
100
100
0.35
400
-
-
MH z
pF
Classification of hFE
Rank
Range
A
120~240
B
200~400
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
PZT4672
Elektronische Bauelemente
NPN Transistor
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
stm32/stm8
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