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2N7002GP

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size331KB,3 Pages
ManufacturerCHENMKO
Websitehttp://www.chenmko.com/
Download Datasheet Parametric View All

2N7002GP Overview

Transistor,

2N7002GP Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
2N7002PT
CURRENT 115 m Ampere
FEATURE
.041 (1.05)
.033 (0.85)
SOT-23
.110 (2.80)
.082 (2.10)
.066 (1.70)
.119 (3.04)
* Rugged and reliable.
* High saturation current capability.
* Voltage controlled small signal switch.
(1)
(3)
(2)
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.018 (0.30)
.002 (0.05)
CIRCUIT
(1)
G
D
(3)
.045 (1.15)
.033 (0.85)
.019 (0.50)
* Small surface mounting type. (SOT-23)
* High density cell design for low R
DS(ON)
.
* Suitable for high packing density.
S
(2)
Dimensions in inches and (millimeters)
SOT-23
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
2N7002PT
Units
V
DSS
Drain-Source Voltage
60
60
V
V
V
V
DGR
V
GSS
Drain-Gate Voltage (R
GS
= 1 M
)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
±
20
±
40
115
75
800
225
-55 to 150
I
D
Maximum Drain Current -Continuous
(Note1)
T
C
= 25°C
-Continuous
(Note1)
T
C
= 100°C
- Pulsed
(Note2)
T
C
= 25°C
mA
mW
mW
°C
P
D
T
J
,T
STG
Maximum Power Dissipation
(Note3)
T
A
= 25°C
Operating and Storage Temperature Range
Note:
1. The Power Dissipation of the package may result in a lower continuous drain current
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
3. for FR-5 board 1.0*0.75*0.062in.
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
556
°C/W
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