MOC205 , MOC206 , MOC207 , MOC208,
MOC211 , MOC212 , MOC213 ,
MOC215 , MOC216 , MOC217
SMALL OUTLINE OPTICALLY
COUPLED ISOLATOR
TRANSISTOR OUTPUT
DESCRIPTION
8
7
6
5
Dimensions in mm
1
2
3
1
2
3
4
4
8
7
6
5
This series of optically coupled isolators consist of
a Gallium Arsenide infrared emitting diode and NPN
silicon photo transistor mounted in a standard 8 pin
SOIC package,which makes them ideally suited for
high density applications with limited space.
5.25
FEATURES
4.75
5.0 Max
l
Standard SOIC-8 Footprint with 0.05" Lead Spacing
l
Specified min. and max. CTR at 10mA I
F
,
10V V
CE
4.9 Max
3.9 Max
MOC205 , 40 - 80%
MOC206 , 63 - 125%
3.3 Max
MOC207 , 100 - 200%
MOC208 , 160 - 320%
l
Specified minimum CTR at 10mA I
F
, 10V V
CE
0.3
0.1Min
MOC211 , 20%
6.15
Max
MOC212 , 50%
0.35
5.85
1.27
3.81
0.45
MOC213 , 100%
l
Specified minimum CTR at 1mA I
F
, 5V V
CE
MOC215 , 20%
APPLICATIONS
MOC216 , 50%
MOC217 , 100%
l
Computer terminals
l
Isolation Voltage , 2500 V
RMS
l
Industrial systems controllers
l
High BV
CEO
(70V min)
l
Hybrid substrates that require
l
All electrical parameters 100% tested
high density mounting
l
Available in Tape and Reel - add suffix " T& R "
l
Signal transmission between systems of
l
Custom electrical selections available
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
( 25°C unless otherwise noted)
OUTPUT TRANSISTOR
Storage Temperature
-55 C to +125 C
Operating Temperature
-55
0
C to +100
0
C
Lead Soldering Temperature
260
0
C
(single wave for 10 secs)
Input to Output Isolation Voltage
2500V
RMS
INPUT DIODE
Forward Current
60mA
Reverse Voltage
6V
Peak Forward Current (tp
≤
10
µ
s)
3A
Power Dissipation
100mW
(derate linearly 1.33mW/
0
C above 25
0
C)
Junction Temperature
125
0
C
0
0
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector -base Voltage BV
CBO
Collector Current
Collector Current
(pw
≤
10ms , 50% duty ratio
)
Power Dissipation
(derate linearly 2.00mW/
0
C above 25
0
C)
Junction Temperature
PACKAGE
70V
7V
70V
50mA
100mA
150mW
125
0
C
Total Power Dissipation
250mW
(derate linearly 3.3mW/
0
C above 25
0
C)
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92245-AAS/A3
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ELECTRICAL CHARACTERISTICS (25
0
C unless otherwise noted)
PARAMETER
Input
Forward Voltage (V
F
)
Capacitance
Reverse Current (I
R
)
Collector -emitter Voltage (BV
CEO
)
Emitter-collector Voltage (BV
ECO
)
Collector-base Voltage (BV
CBO
)
Collector-emitter Dark Current (I
CEO
)
CurrentTransferRatio(CTR) MOC205
MOC206
MOC207
MOC208
MOC211
MOC212
MOC213
Coupled
MOC205
MOC206
MOC207
MOC208
MOC215
MOC216
MOC217
Collector-emitter Saturation Voltage V
CE(SAT)
( MOC205 to MOC213)
Collector-emitter Saturation Voltage V
CE(SAT)
( MOC215 to MOC217)
Capacitance Input to Output (C
ISO
)
Input to Output Isolation Resistance (R
ISO
)
Input to Output Isolation Voltage (V
ISO
)
Output Turn on Time (t
on
)
Output Turn off Time (t
off
)
Output Rise Time (t
r
)
Output Fall Time (t
f
)
13
22
34
56
20
50
100
0.4
0.4
0.3
10
11
2500
3.0
3.0
1.6
2.2
%
%
%
%
%
MIN
TYP MAX UNITS
1.2
50
1.5
100
Volt
pF
µ
A
Volt
Volt
Volt
nA
%
%
%
%
%
%
%
TEST CONDITIONS
I
F
= 10 mA
V
R
= 0 ,f = 1 MHz
V
R
= 6V
I
C
= 100 µA
I
E
= 100 µA
I
C
= 100 µA
V
CE
= 10V
I
F
= 10 mA, V
CE
= 10V
Output
70
7
70
50
40
63
100
160
20
50
100
80
125
200
320
I
F
= 1 mA, V
CE
= 10V
%
%
Volt
Volt
pF
Ω
V
RMS
µ
s
µ
s
µ
s
µ
s
I
F
= 1 mA, V
CE
= 5V
I
F
= 10 mA, I
C
= 2 mA
I
F
= 1 mA, I
C
= 0.1 mA
f = 1MHz (note 1)
V
IO
= 500V (note 1)
Note 1
I
C
= 2 mA,
V
CC
= 10V, R
L
= 100
Ω
Note 1. Measured with input leads shorted together and output leads shorted together.
V
CC
= 10V
R
L
= 100
Ω
OUTPUT
INPUT
t
on
t
f
t
off
t
r
OUTPUT
10%
10%
FIG 1
90%
90%
7/12/00
DB92245-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Current transfer ratio CTR (%)
320
280
240
200
160
120
80
40
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
Current transfer ratio CTR (%)
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
320
Relative current transfer ratio
I
F
= 10mA
V
CE
= 10V
Current transfer ratio CTR (%)
1.5
280
240
200
160
120
80
40
0
-30
0
25
50
75
100
320
280
240
200
160
120
0
Current Transfer Ratio vs. Forward Current
V
CE
= 10V
T
A
= 25°C
MOC208
MOC207
150
100
MOC206
MOC205
50
1
2
5
10
20
50
Forward current I
F
(mA)
Current Transfer Ratio vs. Forward Current
V
CE
= 10V
T
A
= 25°C
MOC213
MOC212
80
40
0
1
2
5
10
20
50
Forward current I
F
(mA)
Current Transfer Ratio vs. Forward Current
MOC211
V
CE
= 5V
T
A
= 25°C
MOC217
MOC216
1.0
0.5
MOC215
0
Ambient temperature T
A
( °C )
7/12/00
1
2
5
10
20
50
Forward current I
F
(mA)
DB92245-AAS/A3
京公网安备 11010802033920号
EEWORLD
