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M29DW127G60ZA6E

Description
Flash, 8MX16, 60ns, PBGA64, 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64
Categorystorage    storage   
File Size2MB,95 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

M29DW127G60ZA6E Overview

Flash, 8MX16, 60ns, PBGA64, 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64

M29DW127G60ZA6E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTBGA, BGA64,8X8,40
Contacts64
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time60 ns
Spare memory width8
startup blockBOTTOM/TOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B64
length13 mm
memory density134217728 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,62
Number of terminals64
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA64,8X8,40
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
page size8/16 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size64K,256K
Maximum standby current0.0001 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width10 mm
M29DW127G
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot)
3 V supply flash memory
Features
Supply voltage
– V
CC
= 2.7 to 3.6 V for program, erase and
read
– V
CCQ
= 1.65 to 3.6 V for I/O buffers
– V
PPH
= 12 V for fast program (optional)
Asynchronous random/page read
– Page width: 8 words / 16 bytes
– Page access: 25 ns
– Random access: 60 or 70, 80 ns
Enhanced Buffered Program commands
– 256 words
Programming time
– 15
μs
per byte/word (typical)
– 32-word write buffer
– Chip program time: 5 s with V
PPH
and 8 s
without V
PPH
Erase verify
Memory blocks
– Quadruple bank memory array:
16 Mbit+48 Mbit+48 Mbit+16 Mbit
– Parameter blocks (at top and bottom)
Dual operation
– while program or erase in one bank, read in
any of the other banks
Program/erase suspend and resume modes
– Read from any block during program
suspend
– Read and program another block during
erase suspend
Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer/ Enhanced Buffered Program
commands
– Faster production/batch programming
– Faster block and chip erase
Common flash interface
– 64-bit security code
TSOP56 (NF)
14 x 20 mm
BGA
TBGA64 (ZA)
10 x 13 mm
100,000 program/erase cycles per block
Low power consumption
– Standby and automatic standby
Hardware block protection
– V
PP
/WP pin for fast program and write
protect of the four outermost parameter
blocks
Security features
– Volatile protection
– Non-volatile protection
– Password protection
– Additional block protection
Extended memory block
– Extra block (128-word / 256-byte factory
locked and 128-word / 256-byte customer
lockable) used as security block or to store
additional information
Electronic signature
– Manufacturer code: 0020h
– Device code: 227Eh+2220h+2204h
ECOPACK
®
packages available
May 2009
Rev 3
1/95
www.numonyx.com
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