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SS10PH10-E3/86A

Description
10 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A
CategoryDiscrete semiconductor    diode   
File Size88KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SS10PH10-E3/86A Overview

10 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A

SS10PH10-E3/86A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.88 V
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components1
Maximum operating temperature175 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage100 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
SS10PH9 & SS10PH10
Preliminary
Vishay General Semiconductor
High Current Density Surface Mount
High-Voltage Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.1 mm
K
• Ideal for automated placement
• Guardring for overvoltage protection
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• High Barrier Technology, T
j
= 175 °C Maximum
• Low leakage current
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, free-wheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case:
TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
As marked
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 10 A
I
R
T
j
max.
10 A
90 V, 100 V
200 A
20 mJ
0.661 V
0.3 µA
175 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at I
AS
= 2 A, L = 10 mH, T
j
= 25 °C
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
dv/dt
T
J,
T
STG
SYMBOL
SS10PH9
10H9
90
10
200
20
10000
- 55 to + 175
SS10PH10
10H10
100
V
A
A
mJ
V/µs
°C
UNIT
Document Number 89000
24-Jul-06
www.vishay.com
1

SS10PH10-E3/86A Related Products

SS10PH10-E3/86A SS10PH10-E3/87A SS10PH9
Description 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A
Diode type RECTIFIER DIODE RECTIFIER DIODE rectifier diode
Maximum non-repetitive peak forward current 200 A 200 A 200 A
Number of components 1 1 1
Maximum repetitive peak reverse voltage 100 V 100 V 100 V
surface mount YES YES Yes
Is it Rohs certified? conform to conform to -
Reach Compliance Code unknown unknown -
ECCN code EAR99 EAR99 -
Is Samacsys N N -
Configuration SINGLE SINGLE -
Maximum forward voltage (VF) 0.88 V 0.88 V -
JESD-609 code e3 e3 -
Humidity sensitivity level 1 1 -
Maximum operating temperature 175 °C 175 °C -
Maximum output current 10 A 10 A -
technology SCHOTTKY SCHOTTKY -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) -
Base Number Matches 1 1 -
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