SS29 datasheet, PDF - EEWORLD Datasheet

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SS29: Description1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AA; Categorysemiconductor Discrete semiconductor; File Size1MB，2 Pages; ManufacturerTAYCHIPST; Websitehttp://www.taychipst.com

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1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AA

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SS22 THRU SS210

20V-100V

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

2.0A

Features

For surface mounted application

Metal to silicon rectifier, majority carrier conduction

Low forward voltage drop

Easy pick and place

High surge current capability

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Epitaxial construction

High temperature soldering:

260

o

C / 10 seconds at terminals

Mechanical Data

Case: Molded plastic

Terminals: Solder plated

Polarity: Indicated by cathode band

Packaging: 12mm tape per EIA STD RS-481

Weight: 0.093gram

2.0 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings*

Symbol

I

O

i

f(surge)

P

D

R

θJA

T

stg

T

J

T

A

= 25°C unless otherwise noted

Parameter

Average Rectified Current

.375 " lead length @ T

A

= 75°C

Peak Forward Surge Current

8.3 ms single half-sine-wave

Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient **

Storage Temperature Range

Operating Junction Temperature

Value

2.0

Units

A

50

1.3

13

75

-65 to +150

-65 to +125

A

W

mW/°C

°C/W

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

**Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics

Parameter

22

Peak Repetitive Reverse Voltage

Maximum RMS Voltage

DC Reverse Voltage (Rated V

R

)

Maximum Reverse Current T

A

= 25°C

(Note 1)

@ rated V

R

T

A

= 100°C

Maximum Forward Voltage @ 2.0 A

20

14

20

T

A

= 25°C unless otherwise noted

Device

23

30

21

30

24

40

28

40

25

50

35

50

0.4

10

700

26

60

42

60

28

80

56

80

29

90

64

90

210

100

80

100

Units

V

mA

mV

500

850

Note:Pulse Test:Pulse widthÿ300ÿs,Duty:cycleÿ2.0%

E-mail: sales@taychipst.com

1 of 2

Web Site: www.taychipst.com

SS29 Related Products

	SS29	SS210	SS22	SS26	SS23	SS24	SS25	SS28
Description	1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC	RECTIFIER DIODE	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA
Number of terminals	-	2	-	2	2	-	2	2
Number of components	-	1	-	1	1	-	1	1
Processing package description	-	SMB, 2 PIN	-	SMB, 2 PIN	Plastic, SMAJ, 2 PIN	-	Plastic, SMB, 2 PIN	Plastic, SMB, 2 PIN
state	-	DISCONTINUED	-	ACTIVE	DISCONTINUED	ACTIVE	TRANSFERRED	ACTIVE
packaging shape	-	Rectangle	-	Rectangle	Rectangle	-	Rectangle	Rectangle
Package Size	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
surface mount	-	Yes	-	Yes	Yes	-	Yes	Yes
Terminal form	-	C BEND	-	C BEND	C BEND	-	C BEND	C BEND
Terminal location	-	pair	-	pair	pair	-	pair	pair
Packaging Materials	-	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy
Craftsmanship	-	SCHOTTKY	-	SCHOTTKY	SCHOTTKY	-	SCHOTTKY	SCHOTTKY
structure	-	single	-	single	single	-	single	single
Diode component materials	-	silicon	-	silicon	silicon	-	silicon	silicon
Diode type	-	rectifier diode	-	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode
application	-	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE	-	EFFICIENCY	EFFICIENCY
Phase	-	1	-	1	1	-	1	1
Maximum repetitive peak reverse voltage	-	100 V	-	60 V	30 V	-	50 V	80 V
Maximum average forward current	-	2 A	-	2 A	2 A	-	2 A	2 A
Maximum non-repetitive peak forward current	-	50 A	-	50 A	50 A	-	75 A	50 A

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