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SS23

Description
2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size1MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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SS23 Overview

2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC

SS23 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMAJ, 2 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage30 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current50 A
SS22 THRU SS210
20V-100V
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
2.0A
Features
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260
o
C / 10 seconds at terminals
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
2.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
θJA
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Average Rectified Current
.375 " lead length @ T
A
= 75°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
Storage Temperature Range
Operating Junction Temperature
Value
2.0
Units
A
50
1.3
13
75
-65 to +150
-65 to +125
A
W
mW/°C
°C/W
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Parameter
22
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current T
A
= 25°C
(Note 1)
@ rated V
R
T
A
= 100°C
Maximum Forward Voltage @ 2.0 A
20
14
20
T
A
= 25°C unless otherwise noted
Device
23
30
21
30
24
40
28
40
25
50
35
50
0.4
10
700
26
60
42
60
28
80
56
80
29
90
64
90
210
100
80
100
Units
V
V
V
mA
mA
mV
500
850
Note:Pulse Test:Pulse widthÿ300ÿs,Duty:cycleÿ2.0%
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

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SS23 SS210 SS22 SS26 SS29 SS24 SS25 SS28
Description 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AA RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA
Number of terminals 2 2 - 2 - - 2 2
Number of components 1 1 - 1 - - 1 1
Processing package description Plastic, SMAJ, 2 PIN SMB, 2 PIN - SMB, 2 PIN - - Plastic, SMB, 2 PIN Plastic, SMB, 2 PIN
state DISCONTINUED DISCONTINUED - ACTIVE - ACTIVE TRANSFERRED ACTIVE
packaging shape Rectangle Rectangle - Rectangle - - Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes - Yes - - Yes Yes
Terminal form C BEND C BEND - C BEND - - C BEND C BEND
Terminal location pair pair - pair - - pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy - - Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY - SCHOTTKY - - SCHOTTKY SCHOTTKY
structure single single - single - - single single
Diode component materials silicon silicon - silicon - - silicon silicon
Diode type rectifier diode rectifier diode - rectifier diode - rectifier diode rectifier diode rectifier diode
application GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE - - EFFICIENCY EFFICIENCY
Phase 1 1 - 1 - - 1 1
Maximum repetitive peak reverse voltage 30 V 100 V - 60 V - - 50 V 80 V
Maximum average forward current 2 A 2 A - 2 A - - 2 A 2 A
Maximum non-repetitive peak forward current 50 A 50 A - 50 A - - 75 A 50 A

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