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C-1310A-DFB-E-HB-NT

Description
DFB Laser Diode Emitter, 1307nm Min, 1313nm Max, Through Hole Mount,
CategoryWireless rf/communication    Optical fiber   
File Size1MB,3 Pages
ManufacturerSource Photonics
Download Datasheet Parametric View All

C-1310A-DFB-E-HB-NT Overview

DFB Laser Diode Emitter, 1307nm Min, 1313nm Max, Through Hole Mount,

C-1310A-DFB-E-HB-NT Parametric

Parameter NameAttribute value
MakerSource Photonics
Reach Compliance Codeunknown
body height3.5 mm
Body length or diameter3.55 mm
maximum descent time0.5 ns
Fiber optic equipment typesDFB LASER DIODE EMITTER
Installation featuresTHROUGH HOLE MOUNT
Number of channels2
Maximum operating temperature70 °C
Minimum operating temperature
Maximum operating wavelength1313 nm
Minimum operating wavelength1307 nm
Nominal operating wavelength1310 nm
Rise Time0.5 ns
Maximum supply voltage1.7 V
surface mountNO
Minimum threshold current20 mA
Transmission typeDIGITAL
1.27um-1.61um MQW-DFB Laser Diodes for CWDM
C-1XXXA-DFB-E-XX-NT
Absolute Maximum Rating (Tc=25ºC)
Parameter
Optical Output Power
LD Reverse Voltage
LD Forward Current
PD Reverse Voltage
PD Forward Current
Operating Temperature
Storage Temperature
Symbol
Po
V
RLD
I
FLD
V
RPD
I
FPD
T
opr
T
stg
Value
8(CW)
2
150
15
2
0 to +70
-40 to +85
Unit
mW
V
mA
V
mA
ºC
ºC
Optical and Electrical Characteristics( Tc=70ºC )
Parameter
Threshold Current
Optical Output Power
Symbol
I
th
P
o
Min
-
6
Typical
-
8
Max
50
-
Unit
mA
mW
Test Condition
CW
CW, I=I
th
+60mA
Optical and Electrical Characteristics( Tc=25ºC)
Parameter
Threshold Current
Optical Output Power
Peak Wavelength*
Side Mode Suppression Ratio
Forward Voltage
Temperature dependence of
peak wavelength
Rise/Fall Time
Spectral Width
PD Monitor Current
PD Dark Current
PD Capacitance
Symbol
I
th
P
o
λ
Sr
V
F
∆λ
p
/∆Τ
t
r
/ t
f
∆λ
I
m
I
DARK
C
t
Min
-
3
n-3
30
-
-
-
-
100
-
-
Typical
-
4
n
35
-
0.1
-
-
-
0.3
10
Max
20
-
n+3
-
1.7
0.12
0.5
1
1200
1.0
-
Unit
mA
mW
nm
dB
V
nm/ºC
ns
nm
µA
µA
pF
Test Condition
CW
CW, I=I
th
+20mA
CW,P
o
=5mW
CW,P
o
=5mW (0 to 70ºC)
CW
CW,P
o
=5mW (0 to 70ºC)
I
bias
=I
th
, 20-80%
CW,P
o
=5mW, -20dB
CW,P
o
=5mW, V
RPD
=5V
V
RPD
=
5V
V
RPD
=
5V
,
f
=
1MH
z
* Peak wavelength n=1270nm,1290nm,1310nm,1330nm,1350nm,1370nm,1390nm,1410nm,1430nm,1450nm,1470nm,1490nm, 1510nm,1530nm,1550nm,
1570nm,1590nm,1610nm
* Precaution:
1.Avoid eye or skin exposure to laser radiations.
2.The device is sensitive to the electro-static damages (ESD). The device should be handled with ESD proof tools. To assemble the device on PCB, proper grounding
is required to prevent ESD
3.The performance and reliability of the device are not guaranteed when it is operated under environment with strong vibration .
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